State dynamics and modeling of tantalum oxide memristors

IEEE Transactions on Electron Devices

Volumn 60, Issue 7, 2013, Pages 2194-2202

  Strachan, John Paul ^a   Torrezan, Antonio C ^a   Miao, Feng ^a   Pickett, Matthew D ^a   Joshua Yang, J ^a   Yi, Wei ^a   Medeiros Ribeiro, Gilberto ^a   Stanley Williams, R ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

Crossbar; device dynamics; memristor; resistive memory (RRAM); SPICE

Indexed keywords

CIRCUIT ELEMENTS; CROSSBAR; HIGH-SPEED MEMORY; MEMRISTOR; OPERATING POINTS; PREDICTIVE MODELS; RESISTIVE MEMORY (RRAM); STATE EQUATIONS;

COMPUTER SIMULATION; DYNAMICS; ENERGY UTILIZATION; EQUATIONS OF STATE; MEMRISTORS; PASSIVE FILTERS; RANDOM ACCESS STORAGE; TANTALUM OXIDES;

SPICE;

EID: 84879990023     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2264476     Document Type: Article

References (32)

1. L. O. Chua, "Memristor-the missing circuit element," IEEE Trans. Circuit Theory, vol. 18, no. 5, pp. 507-519, Sep. 1971.
2. L. O. Chua and S. M. Kang, "Memristive devices and systems," Proc. IEEE, vol. 64, no. 2, pp. 209-223, Feb. 1976.
3. L. O. Chua, "The fourth element," Proc. IEEE, vol. 100, no. 6, pp. 1920-1927, Jun. 2012.
4. L. Chua, "Resistance switching memories are memristors," Appl. Phys. A, vol. 102, no. 4, pp. 765-783, Mar. 2011.
5. J. J. Yang, M. X. Zhang, J. P. Strachan, F. Miao, M. D. Pickett, R. D. Kelley, G. Medeiros-Ribeiro, and R. S. Williams, "High switching endurance in TaOx memristive devices," Appl. Phys. Lett., vol. 97, no. 23, pp. 232102-1-232102-3, Dec. 2010.
6. M. J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.-B. Kim, C.-J. Kim, D. H. Seo, S. Seo, U.-I. Chung, I.-K. Yoo, and K. Kim, "A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5?x/TaO2?x bilayer structures," Nat. Mater., vol. 10, no. 8, pp. 625-630, Jul. 2011.
7. H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, "Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance," in Proc. IEEE IEDM, Dec. 2010, pp. 1-4.
8. Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima, "Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism," in Proc. IEEE IEDM, Dec. 2008, pp. 293-296.
9. A. C. Torrezan, J. P. Strachan, G. Medeiros-Ribeiro, and R. S. Williams, "Sub-nanosecond switching of a tantalum oxide memristor," Nanotechnology, vol. 22, no. 48, p. 485203, Dec. 2011.
10. J. P. Strachan, A. C. Torrezan, G. Medeiros-Ribeiro, and R. S. Williams, "The switching location of a bipolar memristor: Chemical, thermal and structural mapping," Nanotechnology, vol. 22, no. 25, p. 505402, Jun. 2011.
11. Z. Wei, T. Takagi, Y. Kanzawa, Y. Katoh, T. Ninomiya, K. Kawai, S. Muraoka, S. Mitani, K. Katayama, S. Fujii, R. Miyanaga, Y. Kawashima, T. Mikawa, K. Shimakawa, and K. Aono, "Demonstration of high-density ReRAM ensuring 10-year retention at 85 °C based on a newly developed reliability model," in Proc. IEEE IEDM, Dec. 2011, pp. 1-2.
12. Y. Yang, P. Sheridan, and W. Lu, "Complementary resistive switching in tantalum oxide-based resistive memory devices," Appl. Phys. Lett., vol. 100, no. 20, pp. 203112-1-203112-4, May 2012.
13. H. D. Lee, S. G. Kim, K. Cho, H. Hwang, H. Choi, J. Lee, S. H. Lee, H. J. Lee, J. Suh, S. Chung, Y. S. Kim, K. S. Kim, W. S. Nam, J. T. Cheong, J. T. Kim, S. Chae, E. Hwang, S. N. Park, Y. S. Sohn, C. G. Lee, H. S. Shin, K. J. Lee, K. Hong, H. G. Jeong, K. M. Rho, Y. K. Kim, S. Chung, J. Nickel, J. J. Yang, H. S. Cho, F. Perner, R. S. Williams, J. H. Lee, S. K. Park, and S. Hong, "Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications," in Proc. Symp. VLSI Technol., Jun. 2012, pp. 151-152.
14. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, pp. 80-83, May 2008. (Pubitemid 351630336)
15. J. H. Hur, M.-J. Lee, C. B. Lee, Y.-B. Kim, and C.-J. Kim, "Modeling for bipolar resistive memory switching in transition-metal oxides," Phys. Rev. B, vol. 82, no. 15, pp. 155321-1-155321-5, Oct. 2010.
16. X. Guan, S. Yu, and H.-S. P. Wong, "A SPICE compact model of metal oxide resistive switching memory with variations," IEEE Electron Device Lett., vol. 33, no. 10, pp. 1405-1407, Oct. 2012.
17. D. Ielmini, F. Nardi, and S. Balatti, "Evidence for voltage-driven set/reset processes in bipolar switching RRAM full text," IEEE Trans. Electron Device, vol. 59, no. 8, pp. 2049-2056, Aug. 2012.
18. M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D. R. Stewart, and R. S. Williams, "Switching dynamics in titanium dioxide memristive devices," J. Appl. Phys., vol. 106, no. 7, pp. 074508-1-074508-6, Oct. 2009.
19. T. Chang, S. H. Jo, K.-H. Kim, P. Sheridan, S. Gaba, and W. Lu, "Synaptic behaviors and modeling of a metal oxide memristive device," Appl. Phys. A, vol. 102, no. 4, pp. 851-855, Mar. 2011.
20. P. Sheridan, K.-H. Kim, S. Gaba, T. Chang, L. Chen, and W. Lu, "Device and SPICE modeling of RRAM devices," Nanoscale, vol. 3, no. 9, pp. 3833-3840, 2011.
21. S. Menzel, M. Waters, A. Marchewka, U. Bottger, R. Dittman, and R. Waser, "Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches," Adv. Funct. Mater., vol. 21, no. 23, pp. 4487-4492, Dec. 2011.
22. J. H. Hur, K. M. Kim, M. Chang, S. R. Lee, D. Lee, C. B. Lee, M.-J. Lee, Y.-B. Kim, C.-J. Kim, and U. Chung, "Modeling for multilevel switching in oxide-based bipolar resistive memory," Nanotechnology, vol. 23, no. 22, p. 225702, Jun. 2012.
23. D. Ielmini, "Modeling the universal set/reset characteristics of bipolar RRAM by field and temperature-driven filament growth," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4309-4317, Dec. 2011.
24. D. B. Strukov, J. L. Borghetti, and R. S. Williams, "Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior," Small, vol. 5, no. 9, pp. 1058-1063, 2009.
25. D. B. Strukov, F. Alibart, and R. S. Williams, "Thermophoresis/ diffusion as a mechanism for unipolar resistive switching in metal-oxide-metal memristors," Appl. Phys. A, vol. 107, no. 3, pp. 509-518, 2012.
26. F. Miao, J. P. Strachan, J. J. Yang, M.-X. Zhang, I. Goldfarb, A. C. Torrezan, P. Eschbach, R. D. Kelley, G. Medeiros-Ribeiro, and R. S. Williams, "Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor," Adv. Mater., vol. 23, no. 12, pp. 5633-5640, Dec. 2011.
27. J. P. Strachan, G. Medeiros-Ribeiro, J. J. Yang, M. X. Zhang, F. Miao, I. Goldfarb, M. Holt, V. Rose, and R. S. Williams, "Spectromicroscopy of tantalum oxide memristors," Appl. Phys. Lett., vol. 98, no. 24, pp. 242114-1-242114-3, Jun. 2011.
28. F. Miao, W. Yi, I. Goldfarb, J. J. Yang, M.-X. Zhang, M. D. Pickett, J. P. Strachan, G. Medeiros-Ribeiro, and R. S. Williams, "Continuous electrical tuning of the chemical composition of TaOx-based memristors," ACS Nano, vol. 6, no. 3, pp. 2312-2318, Feb. 2012.
29. I. Goldfarb, F. Miao, J. J. Yang, W. Yi, J. P. Strachan, M.-X. Zhang, M. D. Pickett, G. Medeiros-Ribeiro, and R. S. Williams, "Electronic structure and transport measurements of amorphous transition-metal oxides: Observation of Fermi glass behavior," Appl. Phys. A, vol. 107, no. 1, pp. 1-11, Apr. 2012.
30. A. S. Alexandrov, A. M. Bratkovsky, B. Bridle, S. E. Savelev, D. B. Strukov, R. S. Williams, "Current-controlled negative differential resistance due to Joule heating in TiO2," Appl. Phys. Lett., vol. 99, no. 20, pp. 202104-1-202104-3, Nov. 2011.
31. A. Fantini, D. J. Wouters, R. Degraeve, L. Goux, L. Pantisano, G. Kar, Y.-Y. Chen, B. Govoreanu, J. A. Kittl, L. Altimime, and M. Jurczak, "Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures," in Proc. 4th IEEE Int. Memory Workshop, May 2012, pp. 1-4.
32. D. Ielmini, F. Nardi, and C. Cagli, "Universal reset characteristics of unipolar and bipolar metal-oxide RRAM," IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3252-3253, Oct. 2011.