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Volumn 22, Issue 9, 2014, Pages 970-983

Insulated gate bipolar transistor reliability testing protocol for PV inverter applications

Author keywords

BOS; IGBT; photovoltaic; power electronics; reliability; transistors

Indexed keywords

EXPERIMENTS; PHOTOVOLTAIC CELLS; POWER ELECTRONICS; RELIABILITY; TRANSISTORS;

EID: 84906251094     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2351     Document Type: Article
Times cited : (8)

References (96)
  • 4
    • 84939363872 scopus 로고
    • Evolution of MOS-bipolar power semiconductor technology
    • Baliga B,. Evolution of MOS-bipolar power semiconductor technology. Proceedings of the IEEE 1988; 76 (4): 409-418.
    • (1988) Proceedings of the IEEE , vol.76 , Issue.4 , pp. 409-418
    • Baliga, B.1
  • 5
    • 34548769316 scopus 로고    scopus 로고
    • Degradation behavior of 600V-200A IGBT modules under power cycling and high temperature environment conditions
    • Bouarroudj M, Khatir Z, Ousten J, Badel F,. Degradation behavior of 600V-200A IGBT modules under power cycling and high temperature environment conditions. Microelectronics Reliability 2007; 47: 1719-1724.
    • (2007) Microelectronics Reliability , vol.47 , pp. 1719-1724
    • Bouarroudj, M.1    Khatir, Z.2    Ousten, J.3    Badel, F.4
  • 6
    • 34548772937 scopus 로고    scopus 로고
    • A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs
    • Sep;
    • Castellazzi A, Ciappa M, Fichtner W, Piton M, Mermet-Guyennet M,. A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs. Microelectronics and Reliability Sep 2007; 47 (9-11): 1713-1718.
    • (2007) Microelectronics and Reliability , vol.47 , Issue.911 , pp. 1713-1718
    • Castellazzi, A.1    Ciappa, M.2    Fichtner, W.3    Piton, M.4    Mermet-Guyennet, M.5
  • 8
    • 79952472675 scopus 로고    scopus 로고
    • Application Note APT0201, Advanced Power Technology
    • Dodge J, Hess J,. IGBT tutorial. Application Note APT0201, Advanced Power Technology, 2002.
    • (2002) IGBT Tutorial
    • Dodge, J.1    Hess, J.2
  • 12
    • 84879985197 scopus 로고    scopus 로고
    • TrenchStop-IGBT-next generation IGBT for motor drive application
    • Oct.
    • Frank W,. TrenchStop-IGBT-next generation IGBT for motor drive application. Infineon Technologies AG, Oct 2004.
    • (2004) Infineon Technologies AG
    • Frank, W.1
  • 14
    • 0001014854 scopus 로고
    • Power semiconductor devices: An overview
    • Hower PL,. Power semiconductor devices: an overview. Proceedings of the IEEE 1988; 76 (4): 335-342.
    • (1988) Proceedings of the IEEE , vol.76 , Issue.4 , pp. 335-342
    • Hower, P.L.1
  • 16
    • 13444267421 scopus 로고    scopus 로고
    • Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions
    • Lefebvre S, Khatir Z, Saint-Eve F,. Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions. IEEE Transactions on Electron Devices 2005; 52 (2): 276-283.
    • (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.2 , pp. 276-283
    • Lefebvre, S.1    Khatir, Z.2    Saint-Eve, F.3
  • 17
    • 84906262182 scopus 로고    scopus 로고
    • Analysis of thermomechanically related failures of traction IGBT power modules at short circuit switching
    • Sep 13
    • Nagl B, Nicolics J, Gschohsmann W,. Analysis of thermomechanically related failures of traction IGBT power modules at short circuit switching. Transactions of the IRE Professional Group on Audio, pp. 1-6, Sep 13 2010.
    • (2010) Transactions of the IRE Professional Group on Audio , pp. 1-6
    • Nagl, B.1    Nicolics, J.2    Gschohsmann, W.3
  • 18
    • 0032309837 scopus 로고    scopus 로고
    • Direct measurement and analysis of the time-dependent evolution of stress in silicon devices and solder interconnections in power assemblies
    • He J, Shaw MC, Mather JC, Addison RCJ,. Direct measurement and analysis of the time-dependent evolution of stress in silicon devices and solder interconnections in power assemblies. IEEE Industry Applications Conference, 1998.
    • (1998) IEEE Industry Applications Conference
    • He, J.1    Shaw, M.C.2    Mather, J.C.3    Addison, R.C.J.4
  • 20
    • 0036568067 scopus 로고    scopus 로고
    • Failure modes and FEM analysis of power electronic packaging
    • Ye H, Lin M, Basaran C,. Failure modes and FEM analysis of power electronic packaging. Finite Elements in Analysis and Design 2002; 38 (7): 601-612.
    • (2002) Finite Elements in Analysis and Design , vol.38 , Issue.7 , pp. 601-612
    • Ye, H.1    Lin, M.2    Basaran, C.3
  • 21
    • 0036540853 scopus 로고    scopus 로고
    • Selected failure mechanisms of modern power modules
    • Ciappa M,. Selected failure mechanisms of modern power modules. Microelectronics Reliability 2002; 42: 653-667.
    • (2002) Microelectronics Reliability , vol.42 , pp. 653-667
    • Ciappa, M.1
  • 29
    • 72849143391 scopus 로고    scopus 로고
    • Selecting Die Attach Technology for High-Power Applications
    • New York, NY Nov
    • Harris J, Matthews M,. Selecting Die Attach Technology for High-Power Applications. Power Electronics Technology, New York, NY Nov 2009: 1-6.
    • (2009) Power Electronics Technology , pp. 1-6
    • Harris, J.1    Matthews, M.2
  • 30
    • 0027702156 scopus 로고
    • A discussion on the temperature-dependence of latch-Up trigger current in CMOS/BiCMOS structures
    • Aoki T,. A discussion on the temperature-dependence of latch-Up trigger current in CMOS/BiCMOS structures. IEEE Transactions on Electron Devices 1993; 40 (11): 2023-2028.
    • (1993) IEEE Transactions on Electron Devices , vol.40 , Issue.11 , pp. 2023-2028
    • Aoki, T.1
  • 37
    • 21544467967 scopus 로고
    • Trap creation in silicon dioxide produced by hot-electrons
    • Dimaria D, Stasiak J,. Trap creation in silicon dioxide produced by hot-electrons. Journal of Applied Physics 1989; 65 (6): 2342-2356.
    • (1989) Journal of Applied Physics , vol.65 , Issue.6 , pp. 2342-2356
    • Dimaria, D.1    Stasiak, J.2
  • 38
    • 0034784919 scopus 로고    scopus 로고
    • A new quantitative hydrogen-based model for ultra-thin oxide breakdown
    • Jul 12
    • Sune J, Wu E,. A new quantitative hydrogen-based model for ultra-thin oxide breakdown. Transactions of the IRE Professional Group on Audio, pp. 97-98, Jul 12 2001.
    • (2001) Transactions of the IRE Professional Group on Audio , pp. 97-98
    • Sune, J.1    Wu, E.2
  • 39
    • 62949140890 scopus 로고    scopus 로고
    • Fairchild Semiconductor, Apr
    • Um K,. IGBT Basic II. Fairchild Semiconductor, Apr 2002.
    • (2002) IGBT Basic II
    • Um, K.1
  • 40
    • 0031145997 scopus 로고    scopus 로고
    • Low electric field breakdown of thin SiO2 films under static and dynamic stress
    • Suehle J, Chaparala P,. Low electric field breakdown of thin SiO2 films under static and dynamic stress. IEEE Transactions on Electron Devices 1997; 44 (5): 801-808.
    • (1997) IEEE Transactions on Electron Devices , vol.44 , Issue.5 , pp. 801-808
    • Suehle, J.1    Chaparala, P.2
  • 41
    • 0019656053 scopus 로고
    • Time-zero dielectric reliability test by a ramp method
    • Berman A,. Time-zero dielectric reliability test by a ramp method. Reliability Physics Symposium, pp. 204-209, 1981.
    • (1981) Reliability Physics Symposium , pp. 204-209
    • Berman, A.1
  • 42
    • 0018727292 scopus 로고
    • Method of determining reliability screens for time dependent dielectric breakdown
    • Crook DL,. Method of determining reliability screens for time dependent dielectric breakdown. Reliability Physics Symposium, pp. 1-7, 1979.
    • (1979) Reliability Physics Symposium , pp. 1-7
    • Crook, D.L.1
  • 44
    • 0011076409 scopus 로고    scopus 로고
    • Underlying physics of the thermochemical e model in describing Low-field time-dependent dielectric breakdown in SiO2 thin films
    • McPherson J, Mogul H,. Underlying physics of the thermochemical E model in describing Low-field time-dependent dielectric breakdown in SiO2 thin films. Journal of Applied Physics 1998; 84 (3): 1513-1523.
    • (1998) Journal of Applied Physics , vol.84 , Issue.3 , pp. 1513-1523
    • McPherson, J.1    Mogul, H.2
  • 45
    • 0036641740 scopus 로고    scopus 로고
    • A thorough investigation of Hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs
    • Liu H, Hao Y, Zhu J,. A thorough investigation of Hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs. Microelectronics Reliability 2002; 42 (7): 1037-1044.
    • (2002) Microelectronics Reliability , vol.42 , Issue.7 , pp. 1037-1044
    • Liu, H.1    Hao, Y.2    Zhu, J.3
  • 47
    • 0037766718 scopus 로고    scopus 로고
    • New insights into the relation between channel hot carrier degradation and oxide breakdown short channel nMOSFETs
    • Crupi F, Kaczer B, Groeseneken G, De Keersgieter A,. New insights into the relation between channel hot carrier degradation and oxide breakdown short channel nMOSFETs. IEEE Electron Device Letters 2003; 24 (4): 278-280.
    • (2003) IEEE Electron Device Letters , vol.24 , Issue.4 , pp. 278-280
    • Crupi, F.1    Kaczer, B.2    Groeseneken, G.3    De Keersgieter, A.4
  • 48
    • 0033314798 scopus 로고    scopus 로고
    • Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFETs
    • Henson WK, Yang N, Wortman JJ,. Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFETs. IEEE Electron Device Letters 1999; 20 (12): 605-607.
    • (1999) IEEE Electron Device Letters , vol.20 , Issue.12 , pp. 605-607
    • Henson, W.K.1    Yang, N.2    Wortman, J.J.3
  • 51
    • 67649398774 scopus 로고    scopus 로고
    • Precursor parameter identification for insulated gate bipolar transistor (IGBT) prognostics
    • Patil N, Celaya J, Das D, Goebel K, Pecht M,. Precursor parameter identification for insulated gate bipolar transistor (IGBT) prognostics. IEEE Transactions on Reliability 2009; 58 (2): 271-276.
    • (2009) IEEE Transactions on Reliability , vol.58 , Issue.2 , pp. 271-276
    • Patil, N.1    Celaya, J.2    Das, D.3    Goebel, K.4    Pecht, M.5
  • 56
    • 0006711418 scopus 로고
    • Water treeing in polymeric dielectrics
    • Moscow, Russia
    • Ashcraft A,. Water treeing in polymeric dielectrics. World Electrical Congress, Moscow, Russia, 1977.
    • (1977) World Electrical Congress
    • Ashcraft, A.1
  • 59
    • 0028742721 scopus 로고
    • Turnoff transient characteristics of complementary insulated-gate bipolar-transistor
    • Li Z, Du J,. Turnoff transient characteristics of complementary insulated-gate bipolar-transistor. IEEE Transactions on Electron Devices 1994; 41 (12): 2468-2471.
    • (1994) IEEE Transactions on Electron Devices , vol.41 , Issue.12 , pp. 2468-2471
    • Li, Z.1    Du, J.2
  • 60
    • 84906264664 scopus 로고    scopus 로고
    • Fairchild Semiconductor, Mar
    • Oh K,. IGBT basics I. Fairchild Semiconductor, Mar 2001.
    • (2001) IGBT Basics i
    • Oh, K.1
  • 66
    • 33947709291 scopus 로고    scopus 로고
    • Performance of diagnosis methods for IGBT open circuit faults in three phase voltage source inverters for AC variable speed drives
    • Rothenhagen K, Fuchs FW,. Performance of diagnosis methods for IGBT open circuit faults in three phase voltage source inverters for AC variable speed drives. European Conference on Power Electronics and Applications, 2005.
    • (2005) European Conference on Power Electronics and Applications
    • Rothenhagen, K.1    Fuchs, F.W.2
  • 68
    • 0032083682 scopus 로고    scopus 로고
    • Some observation dealing with the failures of IGBT transistors in high power converters
    • Januszews S, Kociszewska-Szezerbik M,. Some observation dealing with the failures of IGBT transistors in high power converters. Microelectronics Reliability 1998; 38 (6-8): 1325-1330.
    • (1998) Microelectronics Reliability , vol.38 , Issue.68 , pp. 1325-1330
    • Januszews, S.1    Kociszewska-Szezerbik, M.2
  • 69
    • 33846627797 scopus 로고    scopus 로고
    • Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices
    • Khatir Z, Lefebvre S, Saint-Eve F,. Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices. Microelectronics Reliability 2007; 47: 422-428.
    • (2007) Microelectronics Reliability , vol.47 , pp. 422-428
    • Khatir, Z.1    Lefebvre, S.2    Saint-Eve, F.3
  • 71
    • 0032777935 scopus 로고    scopus 로고
    • Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress
    • Trivedi M, Shenai K,. Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress. Power Electronics, IEEE Transactions on 1999; 14 (1): 108-116.
    • (1999) Power Electronics, IEEE Transactions on , vol.14 , Issue.1 , pp. 108-116
    • Trivedi, M.1    Shenai, K.2
  • 74
    • 0031673050 scopus 로고    scopus 로고
    • Investigation of the short-circuit performance of an IGBT
    • Trivedi M, Shenai K,. Investigation of the short-circuit performance of an IGBT. IEEE Transactions on Electron Devices 1998; 45 (1): 313-320.
    • (1998) IEEE Transactions on Electron Devices , vol.45 , Issue.1 , pp. 313-320
    • Trivedi, M.1    Shenai, K.2
  • 76
    • 0042164571 scopus 로고    scopus 로고
    • A study on the short-circuit capability of field-stop IGBTs
    • Jul 01;
    • Otsuki M, Onozawa Y, Matsumoto T,. A study on the short-circuit capability of field-stop IGBTs. IEEE Transactions on Electron Devices Jul 01 2003; 50 (6): 1525-1531.
    • (2003) IEEE Transactions on Electron Devices , vol.50 , Issue.6 , pp. 1525-1531
    • Otsuki, M.1    Onozawa, Y.2    Matsumoto, T.3
  • 80
    • 34548697542 scopus 로고    scopus 로고
    • A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation
    • Benmansour A, Azzopardi S, Martin J, Woirgard E,. A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation. Microelectronics and Reliability Sep 2007; 47 (9-11): 1800-1805.
    • (2007) Microelectronics and Reliability , vol.47 , Issue.911 , pp. 1800-1805
    • Benmansour, A.1    Azzopardi, S.2    Martin, J.3    Woirgard, E.4
  • 81
    • 33645831152 scopus 로고    scopus 로고
    • Investigation of short-circuit failure limited by dynamic-avalanche capability in 600-V punchthrough IGBTs
    • Oh K, Kim Y, Lee K, Yun C,. Investigation of short-circuit failure limited by dynamic-avalanche capability in 600-V punchthrough IGBTs. IEEE Transactions on Device and Materials Reliability 2006; 6 (1): 2-8.
    • (2006) IEEE Transactions on Device and Materials Reliability , vol.6 , Issue.1 , pp. 2-8
    • Oh, K.1    Kim, Y.2    Lee, K.3    Yun, C.4
  • 84
    • 0001596192 scopus 로고
    • Power semiconductors empirical diagrams expressing life as a function of temperature excursion
    • Somos I, Piccone D, Willinger L, Tobin W,. Power semiconductors empirical diagrams expressing life as a function of temperature excursion. IEEE Transactions on Magnetics 1993.
    • (1993) IEEE Transactions on Magnetics
    • Somos, I.1    Piccone, D.2    Willinger, L.3    Tobin, W.4
  • 87
    • 0032083619 scopus 로고    scopus 로고
    • On the effect of power cycling stress on IGBT modules
    • Cova P, Fantini F,. On the effect of power cycling stress on IGBT modules. Microelectronics Reliability 1998; 38 (6-8): 1347-1352.
    • (1998) Microelectronics Reliability , vol.38 , Issue.68 , pp. 1347-1352
    • Cova, P.1    Fantini, F.2
  • 89
    • 0033147361 scopus 로고    scopus 로고
    • Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules
    • Hamidi A, Beck N, Thomas K,. Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules. Microelectronics Reliability 1999; 39: 1153-1158.
    • (1999) Microelectronics Reliability , vol.39 , pp. 1153-1158
    • Hamidi, A.1    Beck, N.2    Thomas, K.3
  • 90
    • 48049087668 scopus 로고    scopus 로고
    • On-line ringing characterization as a PHM technique for power drives and electrical machinery
    • Baltimore, MD, Sep
    • Ginart AE, Brown D, Kalgren PW, Roemer MJ,. On-line ringing characterization as a PHM technique for power drives and electrical machinery. IEEE AUTOTESTCON, vol. Baltimore, MD pp. 654-659, Sep 2007.
    • (2007) IEEE Autotestcon , pp. 654-659
    • Ginart, A.E.1    Brown, D.2    Kalgren, P.W.3    Roemer, M.J.4
  • 92
    • 0022026229 scopus 로고
    • Temperature behavior of insulated gate transistor characteristics
    • Baliga B,. Temperature behavior of insulated gate transistor characteristics. Solid State Electronics 1985; 28 (3): 289-297.
    • (1985) Solid State Electronics , vol.28 , Issue.3 , pp. 289-297
    • Baliga, B.1
  • 96
    • 34548677067 scopus 로고    scopus 로고
    • Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules
    • Jeong J, Hong S, Park S,. Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules. Microelectronics and Reliability Sep 2007; 47 (9-11): 1795-1799.
    • (2007) Microelectronics and Reliability , vol.47 , Issue.911 , pp. 1795-1799
    • Jeong, J.1    Hong, S.2    Park, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.