Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)

2008 International Conference on Prognostics and Health Management, PHM 2008

Volumn , Issue , 2008, Pages

  Patil, Nishad ^a   Das, Diganta ^a   Goebel, Kai ^b   Pecht, Michael ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

Failure precursor parameters; IGBTs; Prognostics

Indexed keywords

ACTIVE FILTERS; AUTOMOBILE PARTS AND EQUIPMENT; BIPOLAR TRANSISTORS; DC MOTORS; ELECTRIC POWER DISTRIBUTION; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC POWER SYSTEMS; ELECTRIC POWER TRANSMISSION NETWORKS; ELECTRIC POWER UTILIZATION; SHAPE MEMORY EFFECT; SWITCHES; SYSTEMS ENGINEERING; TRANSISTORS;

DEVICE DEGRADATION; DIRECT CURRENT (DC) VOLTAGE; FAILURE PRECURSOR PARAMETERS; IGBTS; POWER SUPPLIES; PROGNOSTICS; SWITCH-MODE-POWER-SUPPLY (SMPS); SYSTEM FAILURES; TEMPERATURE RANGES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 58449118950     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PHM.2008.4711417     Document Type: Conference Paper

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