Fieldstop IGBT with MOS-like (tailless) turn-off

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 338-340

  Husken H ^a   Stuckler F ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC LOSSES; ELECTRIC RESISTANCE; MOS DEVICES; SWITCHING;

HARD-SWITCHING;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 4243241162     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T. Laska, M. Münzer, F. Pfirsch, C. Schäffer, T. Schmidt, "The Field Stop IGBT (FS IGBT) - A New Power Device Concept with a Great Improvement Potential", Proceedings of the 12th ISPSD, pp.355-358, 2000
2. S. Dewar et al, "Soft Punch Through (SPT) - Setting new Standards in 1200V IGBT", Proc. PCIM Europe, 2000
3. K. Nakamura, S. Kusunoki, H. Nakamura, Y. Ishimura, Y. Tomomatsu, T. Minato, "Advanced Wide Cell Pitch CSTBTs Having Light Punch-Through (LPT) Structures", Proceedings of the 14th ISPSD, pp.277-280, 2002
4. th ISPSD, pp.441-444, 2001
5. T. Laska, F. Pfirsch, F. Hirler, J. Niedermeyr, C. Schäffer, T. Schmidt, "1200V Trench-IGBT Study with Square Short Circuit SOA", Proceedings of the 10th ISPSD, pp.433-436, 1998