Failure mechanisms of Trench IGBT under various short-circuit conditions

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2007, Pages 1923-1929

  Benmansour, A ^a   Azzopardi, S ^a   Martin, J C ^a   Woirgard, E ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE FILTERS; ELECTRIC CURRENTS; ELECTRIC FAULT LOCATION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; TWO DIMENSIONAL;

DEVICE SIMULATORS; ELECTRICAL CONFIGURATIONS; FAILURE MECHANISMS; GENERATION RATE; HIGH IMPACT; PHYSICAL PARAMETERS; SHORT CIRCUIT; SHORT-CIRCUIT CONDITIONS; THERMAL RUNAWAY; TRENCH IGBT; TURN-OFF;

IMPACT IONIZATION;

EID: 48349133854     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2007.4342297     Document Type: Conference Paper

References (14)

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