New insights into the relation between channel hot carrier degradation and oxide breakdown in short channel nMOSFETs

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 278-280

  Crupi, Felice ^a   Kaczer, Ben ^b   Groeseneken, Guido ^b,c   De Keersgieter, A ^b  

^a UNIVERSITY OF CALABRIA   (Italy)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Dielectric breakdown; Hot carriers; MOSFETs

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; PERMITTIVITY MEASUREMENT;

DIELECTRIC BREAKDOWN; GATE OXIDE BREAKDOWN; HOT CARRIER DEGRADATION; OXIDE BREAKDOWN; SHORT CHANNEL TRANSISTORS; STRESS INDUCED LEAKAGE CURRENT;

MOSFET DEVICES;

EID: 0037766718     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812146     Document Type: Letter

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