Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1719-1724

  Bouarroudj, M ^a   Khatir, Z ^a   Ousten, J P ^a   Badel, F ^a   Dupont, L ^b   Lefebvre, S ^b  

^a INRETS LTN   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTRAINT THEORY; FAILURE ANALYSIS; HIGH TEMPERATURE EFFECTS; MICROPROCESSOR CHIPS; SILICON;

AUTOMOTIVE HYBRID TRACTION APPLICATION; HIGH AMBIENT TEMPERATURES; TEMPERATURE SWINGS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 34548769316     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.027     Document Type: Article

References (12)

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