Investigation of short-circuit failure limited by dynamic-avalanche capability in 600-V punchthrough IGBTs

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 1, 2006, Pages 2-8

  Oh, Kwang Hoon ^a   Kim, Young Chul ^a   Lee, Kyu Hyun ^a   Yun, Chong Man ^a  

^a Fairchild Korea Semiconductor Ltd   (South Korea)

Author keywords

Dynamic break down; Dynamic avalanche capability; Insulated gate bipolar transistor (IGBT); Short circuit ruggedness

Indexed keywords

DYNAMIC BREAK-DOWN; DYNAMIC-AVALANCHE CAPABILITY; INSULATED GATE BIPOLAR TRANSISTOR (IGBT); INTRINSIC THERMAL-FAILURE LIMIT; SHORT-CIRCUIT RUGGEDNESS;

ELECTRIC FAULT CURRENTS; SHORT CIRCUIT CURRENTS; SPECIFIC HEAT;

BIPOLAR TRANSISTORS;

EID: 33645831152     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.870338     Document Type: Article

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