Wirebond reliability in IGBT-power modules: application of high resolution strain and temperature mapping

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 113-116

  Mehrotra, Vivek ^a   He, Jun ^a   Dadkhah, Mahyar S ^a   Rugg, Kevin ^a   Shaw, Michael C ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONFORMAL MAPPING; FRACTURE MECHANICS; HOLOGRAPHIC INTERFEROMETRY; MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; POWER INTEGRATED CIRCUITS; RELIABILITY; TEMPERATURE DISTRIBUTION;

DISPLACEMENT MAPPING; INFRARED MICROSCOPY; INSULATED GATE BIPOLAR TRANSISTOR; STEADY STATE; TRANSIENT STATES; WIREBOND RELIABILITY;

BIPOLAR TRANSISTORS;

EID: 0032598939     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)