Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions

IEEE Transactions on Electron Devices

Volumn 52, Issue 2, 2005, Pages 276-283

  Lefebvre, Stephane ^a,b   Khatir, Zoubir ^c   Saint Eve, Frederic ^b  

^a Bioinformatique et Chimie Moléculaire   (France)

^b Centre National de la Recherche Scientifique   (France)

^c French National Institute for Transport and Safety Research   (France)

Author keywords

COOLMOS; Insulated gate bipolar transistors (IGBT); Power devices; Reliability; Short circuit; Thermal modeling; Thermal runaway

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOSFET DEVICES; RELIABILITY; SHORT CIRCUIT CURRENTS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

COOLMOS; POWER DEVICES; THERMAL MODELING; THERMAL RUNAWAY;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 13444267421     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.842714     Document Type: Article

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