Precursor parameter identification for insulated gate bipolar transistor (IGBT) prognostics

IEEE Transactions on Reliability

Volumn 58, Issue 2, 2009, Pages 271-276

  Patil, Nishad ^a   Celaya, Jose ^b   Das, Diganta ^a   Goebel, Kai ^b   Pecht, Michael ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

Insulated gate bipolar transistors; Precursors; Prognostics

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; COLLECTOR EMITTERS; COLLECTOR-EMITTER VOLTAGE; GATE OXIDE; GATE VOLTAGES; IN-SITU; LATCH-UP; OVERSTRESS; PARAMETER IDENTIFICATION; PHYSICS OF FAILURES; PRECURSORS; PROGNOSTIC APPROACH; PROGNOSTICS; REMAINING USEFUL LIVES; SCANNING ACOUSTIC MICROSCOPY; STEADY STATE; TRAPPED CHARGE; TURN-OFF TIME;

ACOUSTIC MICROSCOPES; ACTIVE FILTERS; BIPOLAR TRANSISTORS; ELECTRONIC EQUIPMENT MANUFACTURE; TESTING;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 67649398774     PISSN: 00189529     EISSN: None     Source Type: Journal    
DOI: 10.1109/TR.2009.2020134     Document Type: Article

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