A thorough investigation of hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs

Microelectronics Reliability

Volumn 42, Issue 7, 2002, Pages 1037-1044

  Liu, Hongxia ^a   Hao, Yue ^a   Zhu, Jiangang ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; GATES (TRANSISTOR); HOT CARRIERS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; STRESS ANALYSIS; SUBSTRATES;

GATE OXIDES; SUBSTRATE CURRENT;

MOSFET DEVICES;

EID: 0036641740     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00070-7     Document Type: Article

References (16)

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5. Consistent model for the hot-carrier degradation in N-channel and P-channel MOSFETs
6. Lucky-electron model of channel hot-electron injection in MOSFETs
7. Hot-carrier-injected oxide region in front and back inerfaces in ultra-thin (50 nm) fully depleted, deep-submicron NMOS and PMOSFETs/SIMOX and their hot-carrier immunity
8. Hot-carrier effects and reliable lifetime prediction in deep submicron N- and P-channel SOI MOSFETs
9. Electrical breakdown in thin gate and tunneling oxides
10. On physical models for gate oxide breakdown
11. Hot-electron-induced quasibreakdown of thin gate oxides
12. Hot-carrier induced degradation in P-channel LDD MOSFETs
13. Modeling and characterization of gate oxide reliability
14. Opposite-channel-based injection of hot-carriers in SOI MOSFETs: Physics and applications