A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1800-1805

  Benmansour, A ^a   Azzopardi, S ^a   Martin, J C ^a   Woirgard, E ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; FAILURE ANALYSIS; SHORT CIRCUIT CURRENTS; SWITCHING;

CLAMPED INDUCTIVE SWITCHING; THERMAL RUNAWAY PHENOMENON; TRENCH INSULATED GATE BIPOLAR TRANSISTOR (T-IGBT) FAILURE MECHANISMS;

TRANSISTORS;

EID: 34548697542     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.051     Document Type: Article

References (11)

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