SCOPUS 정보 검색 플랫폼

Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1431-1436

Investigation of IGBT turn-on failure under high applied voltage operation

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POWER SYSTEMS; ELECTRIC POWER UTILIZATION; ENERGY DISSIPATION; MOS DEVICES; SHORT CIRCUIT CURRENTS;

GATE VOLTAGES; HYBRID VEHICLES (HV); MOTOR DRIVES; ULTRA-LOW EMISSION CARS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 4544338854 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2004.07.069 Document Type: Conference Paper

Times cited : (12)

References (10)

1
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2
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3
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- Investigation on the short-circuit capability of 1200V trench gate field-stop IGBTs
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4
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5
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- A study on the short circuit destruction of IGBTs
- th ISPSD, pp.35-40, 1993
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- Yamashita, J.¹ Uenishi, A.² Tomomatsu, Y.³ Haruguchi, H.⁴ Takahashi, H.⁵ Takata, I.⁶ Hagino, H.⁷

6
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- A study on the IGBT's turn-off failure and inhomogeneous operation
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7
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- An Experimental and Numerical Study on the Forward Biased SOA of IGBT's
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- Hagino, H.¹ Yamashita, J.² Uenishi, A.³ Haruguchi, H.⁴

8
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- M. Otsuki, Y. Onozawa, H. Kanemura, Y. Seki, T. Matsumoto, "A Study on the Short Circuit Capability of Field-Stop IGBTs", IEEE Trans. Electron Devices, 50, pp.l525-1531, 2003
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9
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- th ISPSD, pp. 144-147, 2003
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10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.