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Volumn 24, Issue 29, 2013, Pages

In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices

Author keywords

[No Author keywords available]

Indexed keywords

CONFOCAL RAMAN SPECTROSCOPY; MICROSTRUCTURAL ANALYSIS; OXYGEN VACANCY CONCENTRATION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING DEVICES; RUTHERFORD BACK-SCATTERING SPECTROMETRY;

EID: 84879697729     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/29/295202     Document Type: Article
Times cited : (133)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.