ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

Applied Physics Letters

Volumn 100, Issue 7, 2012, Pages

  Kamiya, Katsumasa ^a   Young Yang, Moon ^a   Park, Seong Geon ^b   Magyari Köpe, Blanka ^b   Nishi, Yoshio ^b   Niwa, Masaaki ^a   Shiraishi, Kenji ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INJECTION; CHARGE STATE; CONDUCTING CHANNELS; DRIVING FORCES; ELECTRODE MATERIAL; ELECTRON-DEFICIENT; SWITCHING MECHANISM; SWITCHING PROCESS; THEORETICAL CALCULATIONS;

SWITCHING;

RANDOM ACCESS STORAGE;

EID: 84863170165     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3685222     Document Type: Article

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