Growth of epitaxial oxides on silicon using atomic layer deposition: Crystallization and annealing of TiO2 on SrTiO3-buffered Si(001)

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 4, 2012, Pages

  McDaniel, Martin D ^a   Posadas, Agham ^b   Ngo, Thong Q ^a   Dhamdhere, Ajit ^c   Smith, David J ^c   Demkov, Alexander A ^b   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; EPITAXIAL FILMS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OXIDE FILMS; PHOTOELECTRONS; SILICON; SILICON OXIDES; STRONTIUM TITANATES; SUBSTRATES; TITANIUM; TITANIUM DIOXIDE; VACUUM; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ALD GROWTH; ANATASE PHASE; ANATASE TITANIUM DIOXIDE; ANNEALING CONDITION; COREACTANTS; CRYSTALLINITIES; IN-SITU; IN-SITU ANNEALING; IN-VACUUM; SI (001) SUBSTRATE; SI(0 0 1); SRTIO; SUBSTRATE TEMPERATURE; SURFACE TEMPLATES; TIO; TITANIUM ISOPROPOXIDE; UNIT CELLS;

ATOMIC LAYER DEPOSITION;

EID: 84864268284     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4734311     Document Type: Article

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