Phase change memory

Proceedings of the IEEE

Volumn 98, Issue 12, 2010, Pages 2201-2227

  Wong, H S Philip ^a   Raoux, Simone ^b   Kim, Sangbum ^a   Liang, Jiale ^a   Reifenberg, John P ^b   Rajendran, Bipin ^c   Asheghi, Mehdi ^a   Goodson, Kenneth E ^a  

^a Stanford University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

Chalcogenides; emerging memory; heat conduction; nonvolatile memory; PCRAM; phase change material; phase change memory (PCM); PRAM; thermal physics

Indexed keywords

CHALCOGENIDES; HEAT CONDUCTION; INORGANIC COMPOUNDS; MEMORY ARCHITECTURE; PHASE CHANGE MATERIALS;

EMERGING MEMORY; NON-VOLATILE MEMORY; PCRAM; PHASE CHANGE MEMORY (PCM); PRAM; THERMAL PHYSICS;

PHASE CHANGE MEMORY;

EID: 78650005927     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2070050     Document Type: Conference Paper

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