Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Agrawal, A ^a   Lin, J ^a   Zheng, B ^b   Sharma, S ^b   Chopra, S ^b   Wang, K ^a   Gelatos, A ^b   Mohney, S ^a   Datta, S ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONTACT RESISTIVITIES; NON-STOICHIOMETRIC; SCHOTTKY BARRIER HEIGHTS; SPECIFIC CONTACT RESISTIVITY; SYSTEMATIC ANALYSIS; TUNNEL CONTACTS; WIDE-GAP SEMICONDUCTOR;

METAL INSULATOR BOUNDARIES; SILICON;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84883439885     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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5. G. Dewey et al. U.S. Patent Application # 0327377, 2010
6. J. Pascaul et.al., PRL, 1977