Semiconductor optoelectronic devices: Introduction to physics and simulation

Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation

Volumn , Issue , 2003, Pages 1-279

  Piprek, Joachim ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84905894675     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/C2009-0-22633-X     Document Type: Book

References (297)

1. R. E. Hummel, Electronic Properties of Materials, 2nd ed., Springer-Verlag, Berlin, 1993.
2. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York, 1981.
3. S. L. Chuang, Physics of Optoelectronic Devices, Wiley, New York, 1995.
4. K. W. Böer, Survey of Semiconductor Physics, Vol. I, Wiley, New York, 2002.
5. J. P. Loehr, Physics of Strained QuantumWell Lasers, Kluwer, Boston, 1998.
6. R. Enderlein and N. J. M. Horing, Fundamentals of Semiconductor Physics and Devices,World Scientific, Singapore, 1997.
7. N. W. Ashcroft and N. D. Mermin, Solid State Physics, Saunders, Forth Worth, 1976.
8. S. Selberherr, Simulation and Analysis of Semiconductor Devices, Springer-Verlag, New York, 1984.
9. K. Hess, Advanced Theory of Semiconductor Devices, IEEE Press, Piscataway, NJ, 2000.
10. N.G. Einspruch andW. R. Frensley, Heterostructures and Quantum Devices, Academic Press, San Diego, 1994.
11. B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics, Wiley, New York, 1991.
12. A. W. Snyder and J. D. Love, Optical Waveguide Theory, Chapmann and Hall, London, 1991.
13. K. J. Ebeling, Integrated Optoelectronics, Springer-Verlag, Berlin, 1993.
14. H. P. Zappe, Introduction to Semiconductor Integrated Optics, Artech House, Boston, 1995.
15. J. A. Kong, Electromagnetic Wave Theory, Wiley, New York, 1990.
16. D. Marcuse, Theory of Dielectric Optical Waveguides, Academic Press, Boston, 1991.
17. K. Okamoto, Fundamentals of Optical Waveguides, Academic Press, San Diego, 2000.
18. K. Kawano and T. Kitoh, Introduction to OpticalWaveguide Analysis, Wiley, New York, 2001.
19. W. W. Chow and S.W. Koch, Semiconductor Laser Fundamentals, Springer-Verlag, Berlin, 1999.
20. S. L. Chuang, Physics of Optoelectronic Devices, Wiley, New York, 1995.
21. J. P. Loehr, Physics of Strained QuantumWell Lasers, Kluwer, Boston, 1998.
22. B. Abeles, Lattice thermal conductivity of disordered semiconductor alloys at high temperatures, Phys. Rev., 131, 1906-1911 (1963).
23. G. K.Wachutka, Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling, IEEE Trans. Comput. Aided Design, 9, 1141-1149 (1990).
24. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, Wiley, New York, 1995.
25. G. P. Agrawal and N. K. Dutta, Semiconductor Lasers, van Nostrand Reinhold, New York, 1993.
26. P. Zory (Ed.), Quantum Well Lasers, Academic Press, San Diego, 1993.
27. J. Carroll, J. Whiteaway, and D. Plumb, DistributedFeedback Semiconductor Lasers, SPIE Press, Bellingham,WA, 1998.
28. E. Kapon (Ed.), Semiconductor Lasers, Academic Press, San Diego, 1999.
29. T. E. Sale, Vertical-Cavity Surface Emitting Lasers, Wiley, NewYork, 1995.
30. C. Wilmsen, H. Temkin, and L. A. Coldren (Eds.), Vertical-Cavity Surface Emitting Lasers, Cambridge Univ. Press, Cambridge, UK, 1999.
31. S. Nakamura and S. F. Chichibu (Eds.), Introduction to Nitride Semiconductor Blue Lasers and Light-Emitting Diodes, Taylor & Francis, London 2000.
32. S. J. Pearton (Ed.), GaN and Related Materials II, Gordon and Breach, Amsterdam, 2000.
33. E. F. Schubert, Light-Emitting Diodes, Cambridge Univ. Press, Cambridge, UK, 2003.
34. M. Fukuda, Optical Semiconductor Devices, Wiley, New York, 1999.
35. A. Ahland, D. Schulz, and E.Voges, Efficient modeling of the optical properties of MQW modulators on InGaAsP with absorption edge merging, IEEE J. Quant. Electron., 34, 1597-1603 (1998).
36. G. L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, Ultrahighspeed traveling-wave electroabsorption modulator - Design and analysis, IEEE Trans. Microwave Theory Techniques, 47, 1177-1183 (1999).
37. T. Aizawa, K. G. Ravikumar, S. Suzaki, T. Watanabe, and R. Yamauchi, Polarization-independent quantum-confined Stark effect in an InGaAs/InP tensile-strained quantum well, IEEE J. Quant. Electron., 30, 585-592 (1994).
38. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard,W.Wiegmann, T. H. Wood, and C. A. Burrus, Electric field dependence of optical absorption near the band gap of quantum well structures, Phys. Rev. B, 32, 1043-1060 (1985).
39. S. Donati, Photodetectors - Devices, Circuits, and Applications, Prentice-Hall, Upper Saddle River, NJ, 2000.
40. H. Ghafouri-Shiraz, Semiconductor Optical Amplifiers, Wiley, New York, 1995.
41. P. Bhattacharya, Semiconductor Optoelectronic Devices, 2nd ed., Prentice-Hall, Upper Saddle River, NJ, 1997.
42. O. Madelung, ed., Semiconductors - Basic Data. Berlin: Springer-Verlag, 1996.
43. K. W. Boer, Survey of Semiconductor Physics, vol. I. New York: Van Nostrand Reinhold, 1990.
44. L. I. Berger, Semiconductor Materials. Boca Raton, FL: CRC Press, 1997.
45. M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, eds., Handbook Series on Semiconductor Parameters, vol. 1. Singapore:World Scientific, 1996.
46. V. Swaminathan, Properties of InP and related materials, in Indium Phosphide and Related Materials (A. Katz, ed.), pp. 1-44, Boston: Artec House, 1992.
47. S. Jain, M.Willander, and R. V. Overstraeten, Compound Semiconductors, Strained Layers, and Devices. Dordrecht: Kluwer, 2000.
48. W. Nakwaski, Effective masses of electrons and heavy holes in GaAs, InAs, AlAs and their ternary compounds, Physica B, vol. 210, pp. 1-25, 1995.
49. D. Bednarczyk and J. Bednarczyk, The approximation of the Fermi-Dirac integral f1/2(η), Phys. Lett., vol. 64A, pp. 409-410, 1978.
50. S. Tiwari, Compound Semiconductor Device Physics. San Diego:Academic Press, 1992.
51. W.W. Chow and S.W. Koch, Semiconductor-Laser Fundamentals. Berlin:Springer-Verlag, 1999.
52. Courtesy of W. Frensley, University of Texas at Dallas, available at http://www.utdallas.edu/~frensley.
53. N. W. Ashcroft and N. D. Mermin, Solid State Physics. Forth Worth:Harcourt Brace College, 1976.
54. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, Band parameters for III-V compound semiconductors and their alloys, J. Appl. Phys., vol. 89, pp. 5815-5875, 2001.
55. J. C. Hensel, H. Hasegawa, and M. Nakayama, Cyclotron resonance in uniaxially stressed silicon, Phys. Rev. A, vol. 138, pp. 225-238, 1965.
56. Y. P.Varshni, Temperature dependence of the energy gap in semiconductors, Physica, vol. 34, pp. 149-154, 1967.
57. R. Pässler, Parameter sets due to fittings of the temperature dependencies of fundamental bandgaps in semiconductors, phys. stat. sol. (b), vol. 216, pp. 975-1007, 1999.
58. R. Zimmermann, Many-particle theory of highly excited semiconductors. Leipzig: Teubner Verlagsgesellschaft, 1988.
59. D. B. M. Klaassen, J. W. Slotboom, and H. C. de Graaff, Unified apparent bandgap narrowing in n-and p-type silicon, Solid State Electron., vol. 35, pp. 125-129, 1992.
60. V. Palankovski, G. Kaiblinger-Grujin, and S. Selberherr, Study of dopantdependent band gap narrowing in compound semiconductor devices, Mater. Sci. Eng. B, vol. 66, pp. 46-49, 1999.
61. S. L. Chuang, Physics of Optoelectronic Devices. New York:Wiley, 1995.
62. S. Chuang, Efficient band-structure calculation of strained quantum-wells, Phys. Rev. B, vol. 43, pp. 9649-9661, 1991.
63. G. L. Bir and G. E. Pikus, eds., Symmetry and Strain Induced Effects in Semiconductors. New York:Wiley, 1974.
64. C.VanDeWalle, Band lineups and deformation potentials in the model-solid theory, Phys. Rev. B, vol. 39, pp. 1871-1883, 1989.
65. J. Luttinger and W. Kohn, Motion of electrons and holes in perturbed periodic fields, Phys. Rev., vol. 97, pp. 869-883, 1955.
66. C. Y. P. Chao and S. L. Chuang, Spin-orbit-coupling effects on the valence band structure of strained semiconductor quantum wells, Phys. Rev. B, vol. 46, pp. 4110-4122, 1992.
67. E. O. Kane, Energy band theory, in Handbook on Semiconductors (T. S. Moss, ed.), pp. 193-217, New York: North-Holland, 1982.
68. P. Enders, A. Bärwolff, M. Woerner, and D. Suisky, kp theory of energy bands, wave functions, and optical selection rules in strained tetrahedral semiconductors, Phys. Rev. B, vol. 51, pp. 16695-16704, 1995.
69. J. P. Loehr, Physics of Strained Quantum Well Lasers. Boston: Kluwer, 1999.
70. S. L. Chuang and C. S. Chang, Aband-structure model of strained quantumwell wurtzite semiconductors, Semicond. Sci. Technol., vol. 12, pp. 252-263, 1997.
71. S. L. Chuang and C. S. Chang, k.p method for strained wurtzite semiconductors, Phys. Rev. B, vol. 54, pp. 2491-2504, 1996.
72. M. Kumagai, S. L. Chuang, and H. Ando, Analytical solutions of the blockdiagonalized hamiltonian for strained wurtzite semiconductors, Phys. Rev. B, vol. 57, pp. 15303-15314, 1998.
73. S. Strite and H. Morkoc, GaN, AlN, and InN:Areview, J. Vac. Sci. Technol., vol. 10,no. 4, pp. 1237-1266, 1992.
74. S.-H. Wei and A. Zunger, Valence band spittings and band offsets of AlN, GaN, and InN, Appl. Phys. Lett., vol. 69, pp. 2719-2721, 1996.
75. S. L. Chuang, Optical gain of strained wurtzite GaN quantum well lasers, IEEE J. Quantum Electron., vol. 32, no. 10, pp. 1791-1799, 1996.
76. Y. C.Yeo,T. C. Chong, andM.F. Li, Electronic band structures and effectivemass parameters of wurtzite GaN and InN, J. Appl. Phys., vol. 83, pp. 1429-1436, 1998.
77. C.Wetzel, T. Takeuchi, S.Yamaguchi, H. Katoh, H. Amano, and I. Akasaki, Optical band gap in GaInN on GaN by photoreflection spectroscopy, Appl. Phys. Lett., vol. 73, pp. 1994-1996, 1998.
78. W.W. Chow, M. Hagerott-Crawford, A. Girndt, and S.W. Koch, Threshold conditions for an ultraviolet wavelength GaN quantum-well laser, IEEE J. Select. Topics Quantum Electron., vol. 4, pp. 514-519, 1998.
79. M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, eds., Properties of advanced semiconductor materials. New York:Wiley, 2001.
80. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Physics. New York:Wiley, 1995.
81. K. Nakamura, A. Shimizu, M. Koshiba, and K. Hayata, Finite-element analysis of quantum wells of arbitrary semiconductors with arbitrary potential profiles, IEEE J. Quantum Electron., vol. 25, pp. 889-895, 1989.
82. D. Ahn, S. L. Chuang, andY. C. Chang, Valence-band mixing effects on the gain and the refractive index change of quantum well lasers, J. Appl. Phys., vol. 64, pp. 4056-4064, 1988.
83. M. P. C. M. Krijn, Heterojunction band offsets and effective masses in III-V quaternary alloys, Semicond. Sci. Technol., vol. 6, pp. 27-31, 1991.
84. M. Guden and J. Piprek, Material parameters of quaternary III-V semiconductors for multilayer mirrors at 1.55 micron wavelength, Modelling Simulation Mater. Sci. Eng., vol. 4,no. 4, pp. 349-57, 1996.
85. M. Cardona and N. E. Christensen, Comments on "spectroscopy of excited states in InGaAs-InP single quantum wells grown by chemical-beam epitaxy, Phys. Rev. B, vol. 37, pp. 1011-1012, 1988.
86. C. Van De Walle, Theoretical study of band offsets at semiconductor interfaces, Phys. Rev. B, vol. 35, pp. 8154-8165, 1987.
87. K. W. Boer, Survey of Semiconductor Physics, vol. II. New York: Van Nostrand Reinhold, 1992.
88. Ioffe Institute, St. Petersburg, Russia,Web Archive on Semiconductor Data, available at http://www.ioffe.rssi.ru/SVA/.
89. W. R. Frensley, Quantum transport, in Heterostructures and Quantum Devices (N.G. Einspruch andW. R. Frensley, eds.), pp. 273-303, San Diego:Academic Press, 1994.
90. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, Single and multiband modeling of quantum electron transport through layered semiconductor devices, J. Appl. Phys., vol. 81, pp. 7845-7869, 1997.
91. Y. Ando and T. Itoh, Calculation of transmission tunneling current across arbitrary potential barriers, J. Appl. Phys., vol. 61, pp. 1497-1502, 1987.
92. A. Messiah, Quantum Mechanics. Amsterdam: North-Holland, 1961.
93. J. Singh, Physics of Semiconductors and their Heterostructures. NewYork:McGraw-Hill, 1993.
94. A. Schenk, Physical Models for Silicon Device Simulation. Berlin: Springer-Verlag, 1998.
95. E. Burstein and S. Lundqvist, eds., Tunneling Phenomena in Solids. New York: Plenum Press, 1969.
96. H. B. Michaelson, ed., Handbook of Chemistry and Physics. Cleveland:Chemical Rubber Co., 1972.
97. S. Selberherr, Analysis and simulation of semiconductor devices. NewYork:Springer-Verlag, 1984.
98. S. M. Sze, Physics of Semiconductor Devices. NewYork:Wiley, 2 ed., 1981.
99. C. M. Snowden, Semiconductor Device Modelling. London:Peregrinus, 1988.
100. Z. M. Li, Crosslight User Manual. Burnaby, British Columbia: Crosslight Software, Inc., 2001.
101. PC1D solar cell simulation software, Key Centre for Photovoltaic Engineering, University of New South Wales, Australia, available at http://www.pv.unsw.edu.au/pc1d/.
102. MINIMOS field-effect transistor simulation software, Institute for Microelectronics, Technical University, Vienna, Austria, available at http://www.www.iue.tuwien.ac.at/software/.
103. M. Sotoodeh,A. H. Khalid, andA.A. Rezazadeh, Empirical low-field mobility model for III-V compounds applicable in device simulation, J. Appl. Phys., vol. 87, no. 6, pp. 2890-2900, 2000.
104. M. Farahmand, C. Garetto, E. Bellotti, K. F. Brennan, M. Goano, E. Ghillino, G. Ghione, J. D. Albrecht, and P. P. Ruden, Monte Carlo simulation of electron transport in the III-nitride wurtzite phase material system: binaries and ternaries, J. Appl. Phys., vol. 48, pp. 535-542, 2001.
105. SIMBA semiconductor device simulation software, Technical University, Dresden, Germany, available at http://www.iee.et.tudresden.de/~klix/simba/.
106. D. M. Caughey and R. E. Thomas, Carrier mobilities in silicon empirically related to doping and field, Proc. IEEE, vol. 55, pp. 2192-2193, 1967.
107. C. M. Maziar and M. S. Lundstrom, Caughey-thomas parameters for electron mobility calculations in GaAs, Electron. Lett., vol. 22, pp. 565-566, 1986.
108. N. D.Arora, J. R. Hauser, and D. J. Roulston, Electron and hole mobilities in silicon as a function of concentration and temperature, IEEE Trans. Electron Devices, vol. 29, pp. 292-295, 1982.
109. R. Quay, C. Moglestue, V. Palankovski, and S. Selberherr, A temperature dependent model for the saturation velocity in semiconductor materials, Mater. Sci. Semicond. Process., vol. 3, pp. 149-155, 2000.
110. S. Adachi, Physical Properties of III-V Semiconductor Compounds. New York:Wiley, 1992.
111. M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, eds., Handbook Series on Semiconductor Parameters, vol. 2. Singapore:World Scientific, 1999.
112. H. Kroemer, The Einstein relation for degenerate carrier concentration, IEEE Trans. Electron Devices, vol. 25, p. 850, 1978.
113. G. E. Shtengel, D. A. Ackermann, P. A. Morton, E. J. Flynn, and M. S. Hybertsen, Impedance-corrected carrier lifetime measurements in semiconductor lasers, Appl. Phys. Lett., vol. 67, pp. 1506-1508, 1995.
114. M. C. Wang, K. Kash, C. Zah, R. Bhat, and S. L. Chuang, Measurement of nonradiative auger and radiative recombination rates in strained-layer quantum-well systems, Appl. Phys. Lett., vol. 62, pp. 166-168, 1993.
115. Y. Suematsu and A. R. Adams, eds., Handbook of Semiconductor Lasers and Photonic Integrated Circuits. London: Chapman & Hall, 1994.
116. G. W. Charache, P. F. Baldasaro, L. R. Danielson, D. M. DePoy, M. J. Freeman, C. A. Wang, H. K. Choi, D. Z. Garbuzov, R. U. Martinelli, V. Khalfin, S. Saroop, J. M. Borrego, and R. J. Gutmann, InGaAsSb thermophotovoltaic diode: Physics evaluation, J. Appl. Phys., vol. 85, pp. 2247-2252, 1999.
117. E. Wintner and E. P. Ippen, Nonlinear carrier dynamics in InGaAsP compounds, Appl. Phys. Lett., vol. 44, pp. 999-1001, 1984.
118. G. Agrawal and N. Dutta, Semiconductor Lasers. New York: van Nostrand Reinhold, 1986.
119. W. Shockley and J. T. W. Read, Statistics of the recombinations of holes and electrons, Phys. Rev., vol. 87, pp. 835-842, 1952.
120. R. N. Hall, Electron-hole recombination in germanium, Phys. Rev., vol. 87, p. 387, 1952.
121. T. P. Pearsall, F. Capasso, R. E. Nahory, M. A. Pollack, and J. R. Chelikowsky, The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs, Solid State Electron., vol. 21, pp. 297-302, 1978.
122. A. S. Kyuregyan and S. N. Yurkov, Room-temperature avalanche breakdown voltages of p-n junctions made of Si, Ge, SiC, GaAs, GaP, and InP, Sov. Phys.-Semicond., vol. 23, pp. 1126-1132, 1989.
123. R. V. Oversraeten and H. de Man, Measurement of the ionization rates in duffused silicon pn-junctions, Solid State Electron., vol. 13, pp. 583-608, 1970.
124. T. Mikawa, S. Kagawa, T. Kaneda, Y. Toyama, and O. Mikami, Crystal orientation dependence of ionization rates in germanium, Appl. Phys. Lett., vol. 37, pp. 387-389, 1980.
125. P. Yuan, K. A. Anselm, C. Hu, H. Nie, C. Lenox, A. L. Holmes, B. G. Streetman, J. C. Campbell, and R. J. McIntyre, A new look at impact ionization part II: Gain and noise in short avalanche photodiodes, IEEE Trans. Electron Devices, vol. 46, pp. 1632-1638, 1999.
126. C. A. Armiento and S. H. Grove, Impact ionization in (100)-, (110)-, and (111)-oriented InP avalanche photodiodes, Appl. Phys. Lett., vol. 43, pp. 198-200, 1983.
127. G. A. Baraff, Distribution functions and ionization rates for hot electrons in semiconductors, Phys. Rev., vol. 128, pp. 2507-2517, 1962.
128. C. R. Crowell and S. M. Sze, Temperature dependence of avalanche multiplication in semiconductors, Appl. Phys. Lett., vol. 9, pp. 242-244, 1966.
129. A. P. Dmitriev, M. P. Mikhailova, and I. N.Yassievich, Impact ionization in AIIIBV semiconductors in high electric fields, phys. stat. sol. (b), vol. 140, pp. 9-37, 1987.
130. K. Hess, Advanced Theory of Semiconductor Devices. New York: IEEE Press, 2000.
131. R. Adar, Spatial integration of direct band-to-band tunneling currents in general device structures, IEEE Trans. Electron Devices, vol. 39, pp. 976-981, 1992.
132. G.A. M. Hurkx, D. B. M. Klaassen, and M. P.G. Knuvers, Anew recombination model for device simulation including tunneling, IEEE Trans. Electron Devices, vol. 39, pp. 331-338, 1992.
133. R. Stratton, Diffusion of hot and cold electrons in semiconductor barriers, Phys. Rev., vol. 126, pp. 2002-2014, 1962.
134. K. Bløtekjær, Transport equations for electrons in two-valley semiconductors, IEEE Trans. Electron Devices, vol. 17, pp. 38-47, 1970.
135. Y. Apanovich, E. Lyumkis, B. Polsky, A. Shur, and P. Blakey, Steady-state and transient analysis of submicron devices using energy balance and simplified hydrodynamic models, IEEE Trans. Computer Aided Design, vol. 13, pp. 702-710, 1994.
136. K. Hess, Monte Carlo Device Simulation: Full Band and Beyond. Boston:Kluwer, 1991.
137. A. Forghieri, R. Guerrieri, P. Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani, Anew discretization strategy of the semiconductor equations comprising momentum and energy balance, IEEE Trans. Computer Aided Design, vol. 7, pp. 231-242, 1988.
138. D. Chen, E. Sangiorgi, M. R. Pinto, E. C. Kan, U. Ravaioli, and R. W. Dutton, An improved energy-transport model including nonparabolicity and non-maxwellian distribution effects, IEEE Trans. Computer Aided Design, vol. 13, pp. 26-28, 1992.
139. J. F. Nye, Physical Properties of Crystals. Oxford: Clarendon Press, 1985.
140. E. D. Palik, ed., Handbook of Optical Constants of Solids. San Diego:Academic Press, 1998.
141. F. Fiedler andA. Schlachetzki, Optical parameters of InP-based waveguides, Solid State Electron., vol. 30, no. 1, pp. 73-83, 1987.
142. C. Henry, R. Logan, F. R. Merritt, and J. P. Luongo, The effect of intervalence band absorption on the thermal behaviour of InGaAsP lasers, IEEE J. Quantum Electron., vol. 19,no. 6, pp. 947-952, 1983.
143. J. Taylor and V. Tolstikhin, Intervalence band absorption in InP and related materials for optoelectronic device modeling, J. Appl. Phys., vol. 87, pp. 1054-1059, 2000.
144. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors. Berlin:Springer-Verlag, 1996.
145. G. Ghosh, Refractive index, in Handbook of Optical Constants of Solids (D. Palik and G. Ghosh, eds.), pp. 5-110, San Diego: Academic Press, 1998.
146. M. J. Mondry, D. I. Babic, J. E. Bowers, and L. Coldren, Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications, IEEE Photon. Technol. Lett., vol. 4,no. 6, pp. 627-629, 1992.
147. S. Adachi, H. Kato, A. Moki, and K. Ohtsuka, Refractive index of AlGaInP quaternary alloys, J. Appl. Phys., vol. 75,no. 1, pp. 478-80, 1994.
148. S. H.Wemple and J. DiDomenico, M, Behavior of the electronic dielectric constant in covalent and ionic materials, Phys. Rev.B, vol. 3,no. 4, pp. 1338-1351, 1971.
149. T. Takagi, Dispersion parameters of the refractive index in III-V compound semiconductors, Japan. J. Appl. Phys., PART 1, vol. 21, no. 3, pp. L167-L169, 1982.
150. K. Utaka, K.-I. Kobayashi, and Y. Suematsu, Lasing characteristics of 1.5-1.6 μm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors, IEEE J. Quantum Electron., vol. 17, pp. 651-658, 1981.
151. M.A. Afromowitz, Refractive index of GaAlAs, Solid State Comm., vol. 15, pp. 59-63, 1974.
152. J. Buus and M. J. Adams, Phase and group indices for double heterostructure lasers, IEE J. Solid State Electron. Devices, vol. 3, pp. 189-195, 1979.
153. T. Peng and J. Piprek, Refractive index of AlGaInN alloys, Electron. Lett., vol. 32, pp. 2285-2286, 1996.
154. S. Adachi, Optical dispersion relations for Si and Ge, J. Appl. Phys., vol. 66, no. 7, pp. 3224-3231, 1989.
155. S. Adachi, Optical properties ofAlGaAs alloys, Phys. Rev. B, vol. 38, no. 17, pp. 12345-12352, 1988.
156. S. Adachi, Refractive indices of III-V compounds: key properties of InGaAsP relevant to device design, J. Appl. Phys., vol. 53, no. 8, pp. 5863-5869, 1982.
157. S. Adachi, Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: key properties for a variety of the 2-4 micron optoelectronic device applications, J. Appl. Phys., vol. 61, no. 10, pp. 4869-4876, 1987.
158. H. Kato, S. Adachi, H. Nakanishi, and K. Ohtsuka, Optical properties of AlGaInP quaternary alloys, Japan. J. Appl. Phys., PART 1, vol. 33, no. 1A, pp. 186-192, 1994.
159. S. Adachi and T. Kimura, Optical constants of ZnCdTe ternary alloys:experiment and modeling, Japan. J. Appl. Phys., Part 1, vol. 32,no. 8, pp. 3496-3501, 1993.
160. J. Piprek, T. Peng, G. Qui, and J. O. Olowolafe, Energy gap bowing and refractive index spectrum of AlInN and AlGaInN, in IEEE International Symposium on Compound Semiconductors (M. Melloch and M. A. Reed, eds.), (Bristol), pp. 227-230, Institute of Physics, 1997.
161. G. M. Laws, E. C. Larkins, I. Harrison, C. Molloy, and D. Somerford, Improved refractive index formulas for the AlGaN and InGaN alloys, J. Appl. Phys., vol. 89, pp. 1108-1115, 2001.
162. B. Bennett, R. Soref, and J. DelAlamo, Carrier-induced change in refractive index of InP, GaAs and InGaAsP, IEEE J. Quantum Electron., vol. 26,no. 1, pp. 113-122, 1990.
163. P. Yeh, Optical Waves in Layered Media. New York:Wiley, 1988.
164. R. Scarmozzino, A. Gopinath, R. Pregla, and S. Helfert, Numerical techniques for modeling guided-wave photonic devices, IEEE J. Select. Topics Quantum Electron., vol. 6,no. 1, pp. 150-162, 2000.
165. K. S. Chiang, Review of numerical and approximate methods for the modal analysis of general optical dielectric waveguides, Opt. Quantum Electron., vol. 26, pp. S113-S134, 1994.
166. G. Guekos, ed., Photonic Devices forTelecommunications. Berlin: Springer-Verlag, 1999.
167. B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics. New York:Wiley, 1991.
168. H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LEDs. New York: Academic Press, 1977.
169. K. J. Ebeling, Integrated Optoelectronics. Berlin: Springer-Verlag, 1993.
170. J.-P. Berenger, A perfectly matched layer for the absorption of electromagnetic waves, J. Comput. Phys., vol. 114, pp. 185-200, 1994.
171. E. A. J. Marcatili, Dielectric rectangular waveguide and directional coupler for integrated optics, Bell Syst. Tech. J., vol. 48, pp. 2071-2102, 1969.
172. D. Marcuse, Theory of Dielectric Optical Waveguides. Boston: Academic Press, 1991.
173. T. Ikegami, Reflectivity of mode at facet and oscillation mode in doubleheterostructure injection lasers, IEEE J. Quantum Electron., vol. 8, pp. 470-476, 1972.
174. L. Lewin, A method for the calculation of the radiation-pattern and modeconversion properties of a solid-state heterojunction laser, IEEE Trans. Microwave Theory Techn., vol. 23, pp. 576-585, 1975.
175. C. Herzinger, C. Lu, T. DeTemple, and W.C.Chew, The semiconductor waveguide facet reflectivity problem, IEEE J. Quantum Electron., vol. 29, pp. 2273-2281, 1993.
176. J. Buus, Analytical approximation for the reflectivity of dh lasers, IEEE J. Quantum Electron., vol. 17, pp. 2256-2257, 1981.
177. H.Wenzel, Modellierung von Quasi-Indexgeführten Halbleiterlasern. PhD thesis, Humboldt University Berlin, 1991.
178. P. C. Kendall, D. A. Roberts, P. N. Robson, M. J. Adams, and M. J. Robertson, Semiconductor laser facet reflectivities using free-space radiation modes, IEE Proc., Part J: Optoelectron., vol. 140, pp. 49-55, 1993.
179. M. Reed, T. M. Benson, P. C. Kendall, and P. Sewell, Antireflection-coated angled facet design, IEE Proc., Part J: Optoelectron., vol. 143, pp. 214-220, 1996.
180. J. Carroll, J. Whiteaway, and D. Plump, Distributed Feedback Semiconductor Lasers. Bellingham, WA: SPIE Optical Engineering Press, 1998.
181. G. Morthier and P. Vankwikelberge, Handbook of Distributed Feedback Laser Diodes. Norwood, MA: Artech House, 1997.
182. W. D. Herzog, M. S. Unlu, B. B. Goldberg, G. H. Rhodes, and C. Harder, Beam divergence and waist measurements of laser diodes by near-field scanning optical microscopy, Appl. Phys. Lett., vol. 70,no. 6, pp. 688-690, 1976.
183. A. E. Siegman, Lasers. Mill Valley: University Science Books, 1986.
184. W. T. Silfvast, Laser Fundamantals. Cambridge, UK: Cambridge Univ. Press, 1996.
185. J. Buus, Beamwidth for asymmetric and mulitlayer semiconductor laser structures, IEEE J. Quantum Electron., vol. 17, pp. 732-736, 1981.
186. T. Lau and J. M. Ballantyne, Two dimensional analysis of a dielectric waveguide mirror, IEEE J. Lightwave Technol., vol. 48, pp. 551-558, 1997.
187. R. Yan, S. Corzine, L. Coldren, and I. Suemune, Corrections to the expression of gain in GaAs, IEEE J. Quantum Electron., vol. 26, pp. 213-216, 1990.
188. S. Chinn, P. Zory, and A. Reisinger, A model for GRIN-SCH-SQW diode lasers, IEEE J. Quantum Electron., vol. 24, pp. 2191-2214, 1988.
189. P. Landsberg, Electronic interaction effects on recombination spectra, Phys. Stat. Sol. (b), vol. 15, pp. 623-626, 1966.
190. R. Martin and H. Stormer, On the low energy tail of the electron-hole drop recombination spectrum, Solid State Comm., vol. 22, pp. 523-526, 1977.
191. E. Zielinski, H. Schweizer, S. Hausser, R. Stuber, M. H. Pilkuhn, and G. Weimann, Systematics of laser operation in GaAs/AlGaAs multiquantum well heterostructures, IEEE J. Quantum Electron., vol. 23, pp. 969-976, 1987.
192. E. Zielinski, F. Keppler, S. Hausser, M. H. Pilkuhn, R. Sauer, andW. Tsang, Optical gain and loss processes in GaInAs/InP-MQW laser structure, IEEE J. Quantum Electron., vol. 25, pp. 1407-1416, 1989.
193. M. Asada, Intraband relaxation time in quantum-well lasers, IEEE J. Quantum Electron., vol. 25, no. 9, pp. 2019-2026, 1993.
194. M. Asada, Intraband relaxation effect on optical spectra, in Quantum Well Lasers (P. S. Zory, ed.), pp. 97-130, San Diego: Academic Press, 1993.
195. IEEE Journal of Quantum Electronics, Special Issue on Strained-Layer Optoelectronic Materials and Devices, February 1994.
196. C. Ohler, J. Moers, A. Forster, and H. Luth, Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy, J. Vac. Sci. Technol., vol. B13, pp. 1728-1735, 1995.
197. C.-F. Hsu, P. Zory, C.-H. Wu, and M. Emanuel, Coulomb enhancement in InGaAs-GaAs quantum-well lasers, IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 158-165, 1997.
198. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard,W.Wiegmann, T. H.Wood, and C.A. Burrus, Electric field dependence of optical absorption near the band gap of quantum well structures, Phys. Rev.B, vol. 32, pp. 1043-1059, 1985.
199. C. Kittel, Introduction to Solid State Physics. New York:Wiley, 1996.
200. G. Wachutka, Rigorous thermodynamic treatment of heat generation and conduction in semiconductor modeling, IEEE Trans. Computer Aided Design, vol. 9, pp. 1141-1149, 1990.
201. W. Nakwaski, Thermal conductivity of binary, ternary and quaternary III-V compounds, J. Appl. Phys., vol. 64, pp. 159-166, 1988.
202. B. Abeles, Lattice thermal conductivity of disordered semiconductor alloys at high temperatures, Phys. Rev., vol. 131, pp. 1906-1911, 1963.
203. P. Abraham, J. Piprek, S. DenBaars, and J. E. Bowers, Study of temperature effects on loss mechanisms in 1.55μm laser diodes with InGaP electron stopper layer, Semicond. Sci. Technol., vol. 14, pp. 419-424, 1999.
204. J. Piprek, P.Abraham, and J. E. Bowers, Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers, Appl. Phys. Lett., vol. 74,no. 4, pp. 489-491, 1999.
205. J. Piprek, P. Abraham, and J. E. Bowers, Self-consistent analysis of hightemperature effects on strained-layer multi-quantum well InGaAsP/InP lasers, IEEE J. Quantum Electron., vol. 36, pp. 366-374, 2000.
206. M. Grupen and K. Hess, Simulation of carrier transport and nonlinearities in quantum-well laser diodes, IEEE J. Quantum Electron., vol. 34, pp. 120-140, 1998.
207. G. J. Letal, J. G. Simmons, J. D. Evans, and G. P. Li, Determination of active-region leakage currents in ridge-waveguide strained-layer quantumwell lasers by varying the ridge width, IEEE J. Quantum Electron., vol. 34, pp. 512-518, 1998.
208. J. Piprek, D. I. Babic, and J. E. Bowers, Simulation and analysis of 1.55-micron double-fused vertical-cavity lasers, J. Appl. Phys., vol. 81, pp. 3382-3390, 1997.
209. Y. Zou, J. Osinski, P. Grodzinski, P. Dapkus, W. Rideout, W. Sharfin, J. Schlafer, and F. Crawford, Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5μm compressively strained semiconductor lasers., IEEE J. Quantum Electron., vol. 29, pp. 1565-1575, 1993.
210. G. Fuchs, C. Schiedel, A. Hangleiter, V. Harle, and F. Scholz, Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers, Appl. Phys. Lett., vol. 62, pp. 396-398, 1993.
211. S. Seki,W.W.Lui, and K.Yokoyama, Explanation for the temperature insensitivity of the Auger recombination rates in 1.55μm InP-based strainedlayer quantum-well lasers, Appl. Phys. Lett., vol. 66, pp. 3093-3095, 1995.
212. H. C. Casey and P. L. Panish, Variation of intervalence band absorption with hole concentration in p-type InP, Appl. Phys. Lett., vol. 44, pp. 82-84, 1984.
213. C. H. Henry, R. A. Logan, F.R.Merritt, and J. P. Luongo, The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers, IEEE J. Quantum Electron., vol. 19, pp. 947-952, 1993.
214. I. Joindot and J.L.Beylat, Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55μm semiconductor lasers, Electron. Lett., vol. 29, pp. 604-606, 1993.
215. G. Fuchs, J. Hoerer, A. Hangleiter, V. Haerle, F. Scholz, R.W.Glew, and L. Goldstein, Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures, Appl. Phys. Lett., vol. 60, pp. 231-233, 1992.
216. W.S.Ring, Examinationof intervalence band absorption and its reduction by strain in 1.55-μm compressively strained InGaAs/InP laser diodes, Electron. Lett., vol. 30, pp. 306-308, 1994.
217. T. Cho, H. Kim, Y. Kwon, and S. Hong, Theoretical study on intervalence band absorption in InP-based quantum-well laser structures, Appl. Phys. Lett., vol. 68, pp. 2183-2185, 1996.
218. R. F. Kazarinov and M. R. Pinto, Carrier transport in laser heterostructures, IEEE J. Quantum Electron., vol. 30, pp. 49-53, 1994.
219. J. Braithwaite, M. Silver, V. A.Wilkinson, E. P. O'Reilly, and A. R. Adams, Role of radiative and non-radiative processes on the temperature sensitivity of strained and unstrained 1.5μm InGaAs(P) quantum well lasers, Appl. Phys. Lett., vol. 67, pp. 3546-3548, 1995.
220. L. J. P. Ketelsen and R. F. Kazarinov, Carrier loss in InGaAsP-InP lasers grown by hydride CVD, IEEE J. Quantum Electron., vol. 34, pp. 811-813, 1995.
221. Y.Yoshida, H.Watanabe, K. Shibata,A.Takemoto, and H. Higuchi, Analysis of characteristic temperature for InGaAsP BH lasers with p-n-p-n blocking layers using two-dimensional device simulator, IEEE J. Quantum Electron., vol. 34, pp. 1257-1262, 1998.
222. V. Mikhaelashvili, N. Tessler, R. Nagar, G. Eisenstein, A. G. Dentai, S. Chandrasakhar, and C. H. Joyner, Temperature dependent loss and overflow effects in quantum well lasers, IEEE Photon. Technol. Lett., vol. 6, pp. 1293-1296, 1994.
223. A. A. Bernussi, H. Temkin, D. Coblentz, and R. A. Logan, Effect of barrier recombination on the high temperature performance of quaternary multiquantum well lasers, Appl. Phys. Lett., vol. 66, pp. 67-69, 1995.
224. D. A. Ackerman, G. E. Shtengel, M. S. Hybertsen, P. A. Morgan, R. F. Kazarinov, T. Tanbun-Ek, and R. A. Logan, Analysis of gain in determining To in 1.3μm semiconductor lasers, IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 250-262, 1995.
225. T. E. Sale, Vertical Cavity Surface Emitting Lasers. New York: Wiley, 1995.
226. C. Wilmsen, H. Temkin, and L. A. Coldren, eds., Vertical-Cavity Surface-Emitting Lasers. Cambridge, UK: Cambridge Univ. Press, 1999.
227. D. I. Babic, Y. Chung, N. Dagli, and J. E. Bowers, Modal reflectivity of quarter-wave mirrors in vertical-cavity lasers, IEEE J. Quantum Electron., vol. 6, pp. 1950-1962, 1993.
228. A. Karim, S. Bjorlin, J. Piprek, and J. Bowers, Long-wavelength verticalcavity lasers and amplifiers, IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 1244-1253, 2000.
229. V. Ustinov and A. Zhukov, GaAs-based long-wavelength lasers, Semicond. Sci. Technol., vol. 15, pp. 41-54, 2000.
230. A. Black, A. Hawkins, N. Margalit, D. Babic, J. Holmes, A.L.,Y.-L. Chang, P.Abraham, J. Bowers, and E. Hu, Wafer fusion: materials issues and device results, IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 943-951, 1997.
231. V. Jayaraman, T. Goodnough, T. Beam, F. Ahedo, and R. Maurice, Continuous-wave operation of single-transverse-mode 1310-nm VCSELs up to 115C, IEEE Photon. Technol. Lett., vol. 12, pp. 1595-1597, 2000.
232. A. Karim, J. Piprek, P. Abraham, D. Lofgreen,Y.-J. Chiu, and J. E. Bowers, 1.55-micron vertical-cavity laser arrays for wavelength-division multiplexing, IEEE J. Select. Topics Quantum Electron., vol. 7, pp. 178-183, 2001.
233. N. M. Margalit, J. Piprek, S. Zhang, D. I. Babić, K. Streubel, R. Mirin, J. R. Wesselmann, J. E. Bowers, and E. L. Hu, 64C continuous-wave operation of 1.5-micron vertical-cavity lasers, IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 359-365, 1997.
234. M. G. Peters, B. J. Thibeault, D. B. Young, A. C. Gossard, and L. A. Coldren, Growth of beryllium doped AlGaAs/GaAs mirrors for verticalcavity surface-emitting lasers, J. Vac. Sci. Technol., vol. 12, pp. 3075-3083, 1994.
235. J. Piprek, Y. A. Akulova, D. I. Babic, L. A. Coldren, and J. E. Bowers, Minimum temperature sensitivity of 1.55-micron vertical-cavity lasers at -30 nm gain offset, Appl. Phys. Lett., vol. 72,no. 15, pp. 1814-1816, 1998.
236. Y. M. Zhang, J. Piprek, N.Margalit, M.Anzlowar, and J. Bowers, Cryogenic performance of double-fused 1.5-micron vertical-cavity lasers, IEEE J. Lightwave Technol., vol. 17, pp. 503-508, 1999.
237. D. Babic, J. Piprek, K. Streubel, R. Mirin, N. Margalit, D. Mars, J. Bowers, and E. Hu, Design and analysis of double-fused 1.55μm vertical-cavity lasers, IEEE J. Quantum Electron., vol. 33, pp. 1369-1383, 1997.
238. F. Salomonsson, K. Streubel, J. Bentell, M. Hammar, D. Keiper, R.Westphalen, J. Piprek, L. Sagalowicz, A. Roudra, and J. Behrend, Wafer fused p-InP/p-GaAs heterojunctions, J. Appl. Phys., vol. 83, pp. 768-774, 1998.
239. J. Piprek, Electro-thermal analysis of oxide-confined vertical-cavity lasers, phys. stat. sol. (a), vol. 188, pp. 905-912, 2001.
240. K. Black, P. Abraham, N. Margalit, E. Hegblom, Y.-J. Chiu, J. Piprek, J. Bowers, and E. Hu, Double-fused 1.5-micron vertical cavity lasers with record high To of 132K at room temperature, Electron. Lett., vol. 34, pp. 1947-1949, 1998.
241. D. I. Babic, Double-Fused Long-Wavelength Vertical-Cavity Lasers. PhD thesis, University of California at Santa Barbara, 1995.
242. W. Both and J. Piprek, Thermal resistance of ridge-waveguide laser diodes based on GaAs, GaSb or InP, J. Thermal Analys., vol. 37, pp. 61-71, 1991.
243. J. Piprek, T. Troger, B. Schroter, J. Kolodzey, and C. S. Ih, Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors, IEEE Photon. Technol. Lett., vol. 10,no. 1, pp. 81-83, 1998.
244. G. Chen, C. L. Tien, X. Wu, and J. S. Smith, Thermal diffusivity measurement of GaAs/AlGaAs thin-film structures, ASME J. Heat Transfer, vol. 116, pp. 325-331, 1994.
245. N. M. Margalit, D. I. Babić, K. Streubel, R. Mirin, R. L. Naone, J. E. Bowers, and E. L. Hu, Submilliamp long wavelength vertical cavity lasers, Electron. Lett., vol. 32, pp. 1675-1677, 1996.
246. P. Bienstman, R. R. Baets, J. Vukusic, A. Larsson, M. Noble, M. Brunner, K. Gulden, P. Debernardi, L. Fratta, G. Bava, H. Wenzel, B. Klein, O. Conradi, R. Pregla, S. Riyopoulos, J.-F. Seurin, and S. L. Chuang, Comparison of optical VCSEL models of the simulation of oxide-confined devices, IEEE J. Quantum Electron., vol. 37, pp. 1618-1631, 2001.
247. M. J. Noble, J. P. Loehr, and J. A. Lott, Analysis of microcavity VCSEL lasing modes using a full vector weighted index method, IEEE J. Quantum Electron., vol. 34, pp. 1890-1903, 1998.
248. D. Burak, J. Moloney, and R. Binder, Macroscopic versus microscopic description of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers, IEEE J. Quantum Electron., vol. 36, pp. 956-970, 2000.
249. G. P. Bava, P. Debernardi, and L. Fratta, Three-dimensional model for vectorial fields in vertical-cavity surface-emitting lasers, Phys. Rev. A, vol. 63, p. 023816, 2001.
250. G. Hadley, K. Lear, M. Warren, K. Choquette, J. Scott, and S. Corzine, Comprehensive numerical modeling of vertical-cavity surface-emitting lasers, IEEE J. Quantum Electron., vol. 32, pp. 607-616, 1996.
251. J. Piprek, H.Wenzel, and G. Sztefka, Modeling thermal effects on the light vs. current characteristic of gain-guided vertical-cavity surface-emitting lasers, IEEE Photon. Technol. Lett., vol. 6, pp. 139-142, 1994.
252. B. J. Thibeault, T. A. Strand, T. Wipiejewski, M. G. Peters, D. B. Young, S. Corzine, L. A. Coldren, and J. Scott, Evaluating the effects of optical and carrier losses in etched-post vertical cavity lasers., J. Appl. Phys., vol. 78, pp. 5871-5875, 1995.
253. D. Young, J. Scott, F. Peters, M. Peters, M. Majewski, B. Thibeault, S. Corzine, and L. Coldren, Enhanced performance of offset-gain highbarrier vertical-cavity surface-emitting lasers, IEEE J. Quantum Electron., vol. 29, pp. 2013-2022, 1993.
254. B. Tell, K. Brown-Goebeler, R. Leibenguth, F. Baez, and Y. Lee, Temperature dependence of GaAs-AlGaAs vertical cavity surface emitting lasers, Appl. Phys. Lett., vol. 60, pp. 683-685, 1992.
255. B. Lu, P. Zhou, J. Cheng, K. Malloy, and J. Zolper, High temperature pulsed and continuous-wave operation and thermally stable threshold characteristics of vertical-cavity surface-emitting lasers grown by metalorganic chemical vapor deposition, Appl. Phys. Lett., vol. 65, pp. 1337-1339, 1994.
256. K. Streubel, S. Rapp, J. Andre, and J. Wallin, Room-temperature pulsed operation of 1.5μmvertical cavity lasers with an InP-based Bragg reflector, IEEE Photon. Technol. Lett., vol. 8, pp. 1221-1223, 1996.
257. S. Rapp, J. Piprek, K. Streubel, J.Andre, and J.Wallin, Temperature sensitivity of 1.54-micron vertical-cavity lasers with an InP-based Bragg reflector, IEEE J. Quantum Electron., vol. 33, no. 10, pp. 1839-1845, 1997.
258. S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode. Berlin:Springer-Verlag, 2000.
259. W. Götz, N. M. Johnson, J.Walker, D. P. Bour, and R. A. Street, Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition, Appl. Phys. Lett., vol. 68, pp. 667-669, 1996.
260. W. Götz, N. M. Johnson, C. Chen, H. Liu, C. Kuo, andW. Imler, Activation energies of Si donors in GaN, Appl. Phys. Lett., vol. 68, pp. 3144-3146, 1996.
261. S. Nakamura, T. Mukai, and M. Senoh, In situ monitoring and Hall measurements of GaN grown with GaN buffer layers, J. Appl. Phys., vol. 71, pp. 5543-5549, 1992.
262. J. D. Albrecht, R. P.Wang, P. P. Ruden, M. Farahmand, and K. F. Brennan, Electron transport characteristics of GaN for high temperature device modeling, J. Appl. Phys., vol. 83, pp. 4777-4781, 1998.
263. S. Nakamura, M. Senoh, and T. Mukai, Highly p-type Mg-doped GaN films grown with GaN buffer layers, Japan. J. Appl. Phys., PART 2, vol. 30, pp. L1708-L1711, 1991.
264. M. Rubin, N. Newman, J. S. Chan, T. C. Fu, and J. T. Ross, p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg, Appl. Phys. Lett., vol. 64, pp. 64-66, 1994.
265. J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements, Appl. Phys. Lett., vol. 71, pp. 2572-2574, 1997.
266. A. V. Dmitriev and A. L. Oruzheinikov, The rate of radiative recombination in the nitride semiconductors and alloys, MRS Internet J. Nitride Semicond. Res., vol. 1, p. 46, 1996.
267. S. R. Lee, A. F.Wright, M. H. Crawford, G. A. Petersen, J. Han, and R. M. Biefeld, The band-gap bowing of AlxGa1-xN alloys, Appl. Phys. Lett., vol. 74, pp. 3344-3346, 1999.
268. A. C.Abare, Growth andFabrication of Nitride-Based DistributedFeedback Laser Diodes. PhD thesis, University of California at Santa Barbara, 2000.
269. Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers, J. Appl. Phys., vol. 83, pp. 1813-1819, 1998.
270. Y. C.Yeo, T. C. Chong, and M. F. Li, Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers, IEEE J. Quantum Electron., vol. 34, pp. 2224-2232, 1998.
271. S. H. Park and S. L. Chuang, Many-body optical gain of wurtzite GaNbased quantum-well lasers and comparison with experiment, Appl. Phys. Lett., vol. 72, pp. 287-289, 1998.
272. F. Bernardini,V. Fiorentini, and D.Vanderbilt, Spontaneous polarization and piezoelectric constants of III-V nitrides, Phys. Rev. B, vol. 56, pp. R10024-R10027, 1997.
273. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Accurate calculation of polarization-related quantities in semiconductors, Phys. Rev. B, vol. 63, p. 193201, 2001.
274. F. Bernardini and V. Fiorentini, Nonlinear macroscopic polarization in iii-v nitride alloys, Phys. Rev. B, vol. 64, p. 085207, 2001.
275. L. H. Peng, C.W. Chuang, and L. H. Lou, Piezoelectric effects in the optical properties of strained InGaN quantum wells, Appl. Phys. Lett., vol. 74, pp. 795-797, 1999.
276. F. Della Sala, A. Di Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, and J.-M. Jancu, Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures, Appl. Phys. Lett., vol. 74, pp. 2002-2004, 1999.
277. C. A. Flory and G. Hasnain, Modeling of GaN optoelectronic devices and strain-induced piezoelectric effects, IEEE J. Quantum Electron., vol. 37, pp. 244-253, 2001.
278. M. J. Bergmann and H. C. Casey, Optical-field caalculations for lossy multiple-layerAlGaN/InGaN laser diodes, J. Appl. Phys., vol. 84, pp. 1196-1203, 1998.
279. M. M.Y. Leung,A. B. Djurisic, and E. H. Li, Refractive index of InGaN/GaN quantum wells, J. Appl. Phys., vol. 84, pp. 6312-6317, 1998.
280. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes, Appl. Phys. Lett., vol. 67, pp. 1868-1870, 1995.
281. S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, High dislocation densities in high efficiency GaN-based light-emitting diodes, Appl. Phys. Lett., vol. 66, pp. 1249-1251, 1995.
282. S. Nakamura, Development and future prospects of InGaN-based LEDs and LDs, in Introduction to Nitride Semiconductor Blue Lasers and Light-Emitting Diodes (S. Nakamura and S. F. Chichibu, eds.), pp. 317-350, London: Taylor & Francis, 2000.
283. S. F. Chichibu, Y. Kawakami, and T. Sota, Emission mechanisms and excitons in GaN and InGaN bulk and QWs, in Introduction to Nitride Semiconductor Blue Lasers and Light-Emitting Diodes (S. Nakamura and S. F. Chichibu, eds.), pp. 153-270, London: Taylor & Francis, 2000.
284. K. P. O'Donnell, T. Breitkopf, H. Kalt, W. van der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, Optical linewidhts of InGaN light emitting diodes and epilayers, Appl. Phys. Lett., vol. 70, pp. 1843-1845, 1997.
285. P. Fischer, J. Christen, and S. Nakamura, Spectral electroluminescence mapping of a blue InGaN single quantum well light-emitting diode, Japan. J. Appl. Phys., PART 2, vol. 39, pp. L129-L132, 2000.
286. M. Osinski and D. L. Barton, Life testing and degradation mechanisms in InGaN LEDs, in Introduction to Nitride Semiconductor Blue Lasers and Light-Emitting Diodes (S. Nakamura and S. F. Chichibu, eds.), pp. 271-315, London: Taylor & Francis, 2000.
287. S. J. Lee, Analysis of InGaN high-brightness light-emitting diodes, Japan. J. Appl. Phys., PART 1, vol. 37, pp. 5990-5993, 1998.
288. S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, I. Umemoto, M. Sano, and K. Chocho, Violet InGaN/GaN/AlGaN-based laser diodes with an output power of 420mW, Japan. J. Appl. Phys., PART 2, vol. 37, pp. L627-L629, 1998.
289. W. W. Chow and S. W. Koch, Theory of laser gain in group-III nitride quantum wells, in GaN and Related Materials (S. J. Pearton, ed.), pp. 235-262, New York: Gordon & Breach, 1999.
290. J. Piprek, K. White, and A. SpringThorpe, What limits the maximum ouptut power of long-wavelength AlInGaAs laser diodes ?, IEEE J. Quantum Electron., vol. 38, pp. 1253-1259, 2002.
291. M. Kneissl, W. S. Wong, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff, IEEE J. Select. Topics Quantum Electron., vol. 7, pp. 188-191, 2001.
292. S. Z. Zhang,Y.-J. Chiu, P.Abraham, and J. E. Bowers, 25-GHz polarizationinsensitive electroabsorption modulators with traveling-wave electrodes, IEEE Photon. Technol. Lett., vol. 11, pp. 191-193, 1999.
293. S. Z. Zhang, Traveling-Wave Electroabsorption Modulators. PhD thesis, University of California at Santa Barbara, 1999.
294. J. Piprek,Y.-J. Chiu, J. E. Bowers, C. Prott, and H. Hillmer, High-efficiency multi-quantum well electroabsorption modulators, in Integrated Optoelectronics, vol. 2002-4, (Pennington), pp. 139-149, ECS - The Electrochem. Soc., 2002.
295. G. Agrawal, Fiber-Optic Communication Systems. Singapore:Wiley, 1993.
296. D. Lasaosa, Y. J. Chiu, J. Piprek, and J. E. Bowers, Traveling-wave amplification photodetector (TAP detector), in 13th Lasers and Electro-Optics Society Annual Meeting, (Piscataway), pp. 260-261, Institute of Electrical and Electronic Engineers, 2000.
297. A. W. Snyder and J. D. Love, Optical Waveguide Theory. London:Chapmann and Hall, 1983.