A new look at impact lonization-part II: Gain and noise in short avalanche photodiodes

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1632-1639

  Yuan, P ^a   Anselm, K A ^b   Hu, C ^a   Nie, H ^b   Lenox, C ^a   Holmes, A L ^b   Streetman, B G ^a   Campbell, J C ^b   Mclntyre, R J ^a  

^a The University of Texas at Austin   (United States)

^b Mclntyre Photon Detection Consultants ^*  (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; ELECTRIC FIELDS; GAIN MEASUREMENT; IMPACT IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL NOISE MEASUREMENT;

AVALANCHE PHOTODIODES; HOMOJUNCTION; IONIZATION COEFFICIENTS; IONIZATION PROBABILITY;

PHOTODIODES;

EID: 0033169533     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777151     Document Type: Article

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