Refractive index of InGaN/GaN quantum well

Journal of Applied Physics

Volumn 84, Issue 11, 1998, Pages 6312-6317

  Leung, Mandy M Y ^a   Djuriŝić, Aleksandra B ^a   Li, E Herbert ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000522945     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368954     Document Type: Article

References (18)

1. S. Nakamura and G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers (Springer, Berlin, 1997).
2. S. Adachi, Phys. Rev. B 38, 12345 (1988).
3. S. L. Chuang and C. S. Chang, Phys. Rev. B 54, 2491 (1996).
4. T. Kawashima, H. Yoshikawa, and S. Adachi, J. Appl. Phys. 82, 3528 (1997).
5. J. I. Pankove, Optical Process in Semiconductors (Prentice-Hall, Englewood, NJ, 1971), Chap. 4.
6. G. Bastard, J. A. Brum, and R. Ferreira, "Electronic states in semiconductor heterostructures" in Solid State Physics-Advances in Research and Applications, edited by H. Ehrenreich and D. Tumbull (Academic, New York, 1991), Vol. 44, pp. 229-415.
7. D. J. Ben-Daniel and C. B. Duke, Phys. Rev. 152, 683 (1966).
8. Y. C. Lee, W. N. Mei, and K. C. Lui, J. Phys. C 15, L469 (1982).
9. T. F. Jiang, Solid State Commun. 50, 589 (1984).
10. S. L. Chuang, IEEE J. Quantum Electron. 32, 1791 (1996).
11. K. S. Chan, J. Phys. C 19, L125 (1986).
12. A. D. Rakić and M. L. Majewski, J. Appl. Phys. 89, 5509 (1996).
13. C. C. Kim, J. W. Garland, H. Abad, and P. M. Raccah, Phys. Rev. B 45, 11749 (1992).
14. A. F. Wright and J. S. Nelson, Appl. Phys. Lett. 66, 3051 (1995).
15. M. Suzuki, T. Uenoyama, and A. Yanse, Phys. Rev. B 52, 8132 (1995).
16. A. D. Djurišić, A. D. Rakić, and J. M. Elazzar, Phys. Rev. E 55, 4797 (1997).
17. Q. Guo, O. Kato, M. Fujisawa, and A. Yoshida, Solid State Commun. 83, 721 (1992).
18. Y. C. Yeo, T. C. Chong, and M. F. Li, J. Appl. Phys. 83, 1429 (1998).