What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?

IEEE Journal of Quantum Electronics

Volumn 38, Issue 9, 2002, Pages 1253-1259

  Piprek, Joachim ^a,b   Kenton White, J ^a,c   SpringThorpe, Anthony J ^c  

^a IEEE   (United States)

^b University of California   (United States)

^c NORTEL NETWORKS   (Canada)

Author keywords

Laser thermal factors; Optoelectronic devices; Quantum well devices; Semiconductor device modeling; Semiconductor laser

Indexed keywords

ALUMINUM GALLIUM INDIUM ARSENIDE; AUGER RECOMBINATION; HEAT FLOW; OPTICAL GAIN REDUCTION; SELF-HEATING; THOMSON COOLING; WAVE GUIDING;

BAND STRUCTURE; COMPUTER SIMULATION; CONTINUOUS WAVE LASERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR LASERS;

EID: 0036715111     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.802441     Document Type: Article

References (18)

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