Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflector

IEEE Photonics Technology Letters

Volumn 8, Issue 9, 1996, Pages 1121-1123

  Streubel, K ^a,c   Rapp, S ^a   Andre J ^a   Wallin, J ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ERICSSON RADIO SYSTEMS AB   (Sweden)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; FABRICATION; LASER PULSES; LIGHT REFLECTION; MIRRORS; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

BRAGG REFLECTOR; CAVITY RESONANCE; MATERIAL GAIN; STRAIN COMPENSATED QUANTUM WELLS; VERTICAL CAVITY LASERS;

SEMICONDUCTOR LASERS;

EID: 0030241736     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.531809     Document Type: Article

References (15)

1. K. Uomi, S. J. Yoo, A. Scherer, R. Bhat, N. C. Andreadakis, C. E. Zah, M. A. Koza, and T. P. Lee, "Low threshold, room temperature pulsed operation of 1.5 μm vertical cavity surface-emitting lasers with an optimized multi-quantum well active layer," IEEE Photon. Technol. Lett., vol. 6, pp. 317-319, 1994.
2. T. Baba, Y. Yogo, K. Suzuki, F. Koyama, and K. Iga, "Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser," Electron. Lett., vol. 29, pp. 913-914, 1993.
3. J. J. Dudley, D. I. Babic, R. Mirin, L. Yang, B. I. Miller, R. J. Ram, T. Reynolds, E. L. Hu, and J. E. Bowers, "Low threshold, wafer fused long wavelength vertical cavity lasers," Appl. Phys. Lett., vol. 64, pp. 1463-1465, 1994.
4. D. Babic, J. J. Dudley, K. Streubel, R. P. Mirin, J. E. Bowers, and E. L. Hu, "Double-fused 1.52 μm vertical-cavity lasers," Appl. Phys. Lett., vol. 66, pp. 1030-1032, 1995.
5. D. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, E. L. Hu, D. E. Mars, L. Yang, and K. Carey, "Room-temperature continuous wave operation of 1.54 μm vertical cavity lasers," IEEE Photon. Technol. Lett., vol. 11, pp. 1225-1227, 1995.
6. D. Babic, "Double fused long-wavelength vertical-cavity lasers," Ph.D. dissertation, Univ. California, Santa Barbara, 1995.
7. J. J. Dudley, M. Ishikawa, D. I. Babic, R. Mirin, W. B. Jiang, J. E. Bowers, and E. L. Hu, "144°C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates," Appl. Phys. Lett., vol. 61, pp. 3095-3097, 1992.
8. C. L. Chua, Z. H. Zhu, Y. H. Lo, R. Bhat, and M. Hong, "Low-threshold 1.57μm VC-SEL's using strain-compensated quantum wells and oxide/metal backmirror," IEEE Photon. Technol. Lett., vol. 7, pp. 444-446, 1995.
9. T. Tadokoro, H. Okamoto, Y. Kohama, T. Kawakami, and T. Kurokawa, "Room temperature pulsed operation of 1.5 μm GaInAsP/InP vertical cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 4, pp. 409-411, 1992.
10. Y. Imajo, A. Kasukawa, S. Kashwa, and H. Okamoto, "GaInAsP/InP semiconductor multilayer reflector grown by metalorganic chemical vapor deposition and its application to surface emitting laser diode," Jpn. J. Appl. Phys., vol. 29, pp. L1130-L1132, 1990.
11. M. A. Fischer, Y.-Z. Huag, A. J. Dann, D. J. Elton, M. J. Harlow, S. D. Perrin, J. Reed, I. Reid, and M. J. Adams, "Pulsed electrical operation of 1.5 μm vertical-cavity surface emitting lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 608-610, 1995.
12. K. Streubel and J. Andre, "Fabrication of 1.5 μm optically pumped GaInAsP/InP vertical-cavity surface-emitting lasers," J. Mater. Sci. Eng., vol. B28, pp. 289-292, 1994.
13. K. Streubel, J. Wallin, G. Landgren, U. Öhlander, S. Lourdudoss, and O. Kjebon, "Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers," J. Cryst. Growth, vol. 143, pp. 7-14, 1994.
14. D. Babic and S. W. Corzine, "Analytic expression for the reflection delay, penetration depth, and absorbance of quarter-wave dielectric mirrors," IEEE J. Quantum Electron., vol. 27, p. 514, 1992.
15. S. Lourdudos, K. Streubel, and G. Landgren, "Morphological modifications during selective growth of InP around cylindrical and parallelepiped mesas," J. Mater. Sci. Eng., vol. B28, pp. 179-182, 1994.