A temperature dependent model for the saturation velocity in semiconductor materials

Materials Science in Semiconductor Processing

Volumn 3, Issue 1-2, 2000, Pages 149-155

  Quay, R ^a   Moglestue, C ^a   Palankovski, V ^b   Selberherr, S ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Device simulation; Modeling; Saturation velocity; Temperature

Indexed keywords

EID: 0003342913     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00015-9     Document Type: Article

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