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Volumn 3, Issue 1-2, 2000, Pages 149-155

A temperature dependent model for the saturation velocity in semiconductor materials

Author keywords

Device simulation; Modeling; Saturation velocity; Temperature

Indexed keywords


EID: 0003342913     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00015-9     Document Type: Article
Times cited : (116)

References (39)
  • 9
    • 25344456925 scopus 로고
    • Proc. 18th European Solid State Device Research Conference ESSDRC 88
    • Nougier JP, Gasquet D, editors.
    • Hänsch W, Orlowski M, Weber W. Proc. 18th European Solid State Device Research Conference ESSDRC 88. In: Nougier JP, Gasquet D, editors. Journal de Physique 1988;49:597-606.
    • (1988) Journal de Physique , vol.49 , pp. 597-606
    • Hänsch, W.1    Orlowski, M.2    Weber, W.3
  • 35
    • 0015214295 scopus 로고
    • Boers PM. Elec Lett 1971;7(20):625-6.
    • (1971) Elec Lett , vol.7 , Issue.20 , pp. 625-626
    • Boers, P.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.