The rate of radiative recombination in the nitride semiconductors and alloys

MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

  Dmitriev, Alexey V ^a   Oruzheinikov, Alexander L ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; DECOMPOSITION; ELECTRON CYCLOTRON RESONANCE; ELECTRONIC PROPERTIES; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PASSIVATION; SAPPHIRE; STOICHIOMETRY; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EXTRINSIC DEFECTS; HALL MOBILITY; PLASMA-ENHANCED MOLECULAR BEAM EPITAXY (PEMBE); RADIO FREQUENCIES (RF);

GALLIUM NITRIDE;

EID: 4043128910     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002180     Document Type: Article

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