64 °C continuous-wave operation of 1.5-μm vertical-cavity laser

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 359-365

  Margalit, Near M ^b,f,g   Piprek, Joachim ^a,c,h,i,j   Zhang, S ^b   Babic, Dubravko I ^a,d   Streubel, K ^e   Mirin, R P ^b   Wesselmann, J R ^b   Bowers, John E ^a,b   Hu, Evelyn L ^a,b  

^a IEEE   (United States)

^b University of California   (United States)

^c UNIVERSITY OF DELAWARE   (United States)

^d HEWLETT PACKARD LABORATORIES   (United States)

^e ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^f CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^g UNIVERSITY OF CALIFORNIA   (United States)

^h HUMBOLDT UNIVERSITY   (Germany)

ⁱ Werk für Fernsehlektronik   (Germany)

^j Materials Science Program   (United States)

more..

Author keywords

Optical communication; Quantum well lasers; Semiconductor device bonding; Semiconductor lasers; Surfaceemitting lasers; Temperature

Indexed keywords

BANDWIDTH; CONTINUOUS WAVE LASERS; ELECTRIC LOSSES; HEATING; MIRRORS; OPTICAL COMMUNICATION; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

VERTICAL CAVITY LASERS (VCL);

QUANTUM WELL LASERS;

EID: 0031108794     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605679     Document Type: Article

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