Analysis of characteristic temperature for inGaAsp BH lasers with p-n-p-n blocking layers using two-dimensional device simulator

IEEE Journal of Quantum Electronics

Volumn 34, Issue 7, 1998, Pages 1257-1262

  Yoshida, Yasuaki ^a,b,c   Watanabe, Hitoshi ^a   Shibata, Kimitaka ^a,d   Takemoto, Akira ^a,b,e,f   Higuchi, Hideyo ^a,b,c,g,h,i  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Tokyo Institute of Technology ^*  (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d KYOTO UNIVERSITY   (Japan)

^e OSAKA UNIVERSITY   (Japan)

^f JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^g GUNMA UNIVERSITY   (Japan)

^h LSI R and D Laboratory   (Japan)

ⁱ Info Commun E   (Japan)

Author keywords

Lasers; Leakage currents; Quantum well lasers; Semiconductor lasers; Simulation; Temperature

Indexed keywords

CALCULATIONS; LEAKAGE CURRENTS; LIGHT ABSORPTION; MATHEMATICAL MODELS; QUANTUM WELL LASERS; TEMPERATURE;

AUGER RECOMBINATION CURRENT; BLOCKING LAYERS; BURIED HETEROSTRUCTURE LASERS; THRESHOLD CURRENT; TWO DIMENSIONAL DEVICE SIMULATOR;

SEMICONDUCTOR LASERS;

EID: 0032121899     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.687870     Document Type: Article

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