Coulomb enhancement in InGaAs-GaAs quantum-well lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 158-165

  Hsu, Chia Fu ^a,d,e   Zory, Peter S ^a,f,g,h,i,o   Wu, Chih Hung ^a,b,e,j,o   Emanuel, Mark A ^c,k,l,m,n  

^a University of Florida   (United States)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^e UNIVERSITY OF FLORIDA   (United States)

^f CARNEGIE MELLON UNIVERSITY   (United States)

^g Electronics Lab of General Electric

^h McDonnell Douglas Optoelectronics C ^*  (United States)

ⁱ IBM RESEARCH   (United States)

^j NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^k UNIVERSITY OF DAYTON   (United States)

^l AT AND T LABS RESEARCH   (United States)

^m UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

ⁿ McDonnell Douglas Optoelectronics C   (United States)

^o IEEE

more..

Author keywords

Coulomb enhancement; InGaAs quantum well lasers; Many body effects; Optical gain; Spontaneous emission; Threshold current; Wavelength

Indexed keywords

ELECTRIC CURRENTS; LIGHT EMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN;

COULOMB ENHANCEMENT; OPTICAL GAIN; SPONTANEOUS EMISSION; THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0031109106     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605649     Document Type: Article

References (22)

1. W. W. Chow and S. W. Koch, "Many-body Coulomb effects in room-temperature II-VI quantum well semiconductor lasers," Appl. Phys. Lett., vol. 66, pp. 3004-3006, 1995.
2. W. W. Chow, A. Knorr, and S. W. Koch, "Theory of laser gain in Group-III nitrides," Appl. Phys. Lett., vol. 67, pp. 754-756, 1995.
3. P. Rees, F. P. Logue, J. F. Donegan, J. F. Heffernan, C. Jordan, and J. Hegarty, "Calculation of gain-current characteristics in ZnCdSe-ZnSe quantum well structures including many body effects," Appl. Phys. Lett., vol. 67, pp. 3780-3782, 1995.
4. P. Rees, C. Cooper, P. Blood, P. M. Smowton, and J. Hegarty, "Gain characteristics of GaN quantum wells including many body effects," Electron. Lett., vol. 31, pp. 149-159, 1995.
5. P. Rees, J. F. Heffernan, F. P. Logue, J. F. Donegan, C. Jordan, J. Hegarty, F. Hiei, and A. Ish-ibashi, "Optical gain in ZnCdSe-ZnSe quantum well structures," in SPIE Proc., 1996, vol. 2693, pp. 121-127.
6. C. F. Hsu, P. S. Zory, P. Rees, and M. A. Hasse, "Coulomb enhancement in CdZnSe single quantum well lasers," in SPIE Proc., 1997, vol. 3001, pp. 106-116.
7. H. Haug and S. W. Koch, "Semiconductor laser theory with many-body effects," Phys. Rev. A, vol. 4, pp. 1887-1898, 1989.
8. W. W. Chow, S. W. Koch, and M. Sargent, III, Semiconductor-Laser Physics. Berlin: Springer, 1994.
9. S. W. Corzine, R. H. Yan, and L. A. Coldren, Quantum Well Lasers, P. S. Zory, Ed. New York: Academic, 1993, ch. 1.
10. M. Yamanishi and Y. Lee, "Phase dampings of optical dipole moments and gain spectra in semiconductor lasers," IEEE J. Quantum Electron., vol. QE-23, pp. 367-370, 1987.
11. M. Asada, Quantum Well Lasers, P. S. Zory, Ed. New York: Academic, 1993, ch. 2.
12. P. Blood, P. Rees, C. Cooper, and P. M. Smowton, "Critical issues in laser diode calculations," in SPIE Proc., 1996, vol. 2693, pp. 444-454.
13. C. H. Wu, P. S. Zory, and M. A. Emanuel, "Contact reflectivity effects on thin p-clad InGaAs single quantum well lasers," IEEE Photon. Technol. Lett., vol. 6, pp. 1427-1429, 1994.
14. S. Tarucha, H. Kobayashi, Y. Horikoshi, and H. Okamoto, "Carrier-induced energy-gap shrinkage in current-injection GaAs/AlGaAs MQW heterostructures," Jpn. J. Appl. Phys., vol. 23, pp. 874-878, 1984.
15. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
16. S. R. Chinn, P. S. Zory, and A. R. Reisinger, "A model for GRIN-SCH-SQW diode lasers," IEEE J. Quantum Electron., vol. 24, pp. 2191-2214, 1988.
17. P. A. Chen, C. Juang, and C. Y. Chang, "Carrier-induced energy shift in GaAs/AlGaAs multiple quantum well laser diodes," IEEE J. Quantum Electron., vol. 29, pp. 2607-2618, 1993.
18. W. W. Chow, S. W. Corzine, D. B. Young, and L. A. Coldren, "Many body effects in the temperature dependence of threshold in a vertical-cavity surface-emitting laser," Appl. Phys. Lett., vol. 66, pp. 2460-2462, 1995.
19. G. Lim, Y. Park, C. A. Zmudzinski, P. S. Zory, L. M. Miller, T. L. Cockerill, J. J. Coleman, C. S. Hong, and L. Figueroa, "Predicting diode laser performance," in SPIE Proc., 1991, vol. 1418, pp. 123-131.
20. M. J. Grove, D. A. Hudson, P. S. Zory, R. J. Dalby, C. M. Harding, and A. Rosenberg, "Pulsed anodic oxides for III-V semiconductor device fabrication," J. Appl. Phys., vol. 76, pp. 587-589, 1994.
21. S. Y. Hu, D. B. Young, A. C. Gossard, and L. A. Coldren, "The effect of lateral leakage current on the experimental gain/current-density curve in quantum-well ridge-waveguide lasers," IEEE J. Quantum Electron., vol. 30, pp. 2245-2250, 1994.
22. P. S. Zory, unpublished.