-
1
-
-
0018430047
-
-
W. Walukiewicz, J. Lagowski, L. Jastrzebski, M. Lichtensteiger, and H. C. Gatos, J. Appl. Phys. 50, 899 (1979).
-
(1979)
J. Appl. Phys.
, vol.50
, pp. 899
-
-
Walukiewicz, W.1
Lagowski, J.2
Jastrzebski, L.3
Lichtensteiger, M.4
Gatos, H.C.5
-
6
-
-
0003539448
-
-
Wiley, New York
-
S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley, New York, 1992), pp. 223-238.
-
(1992)
Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
, pp. 223-238
-
-
Adachi, S.1
-
7
-
-
0004147925
-
-
edited by G. W. Neudeck and R. F. Pierret Addison-Wesley, Reading, MA, Chap. 2
-
M. Lundstrom, Fundamentals of Carrier Transport, Vol. 10 of Modular Series on Solid State Devices, edited by G. W. Neudeck and R. F. Pierret (Addison-Wesley, Reading, MA, 1990), Chap. 2.
-
(1990)
Fundamentals of Carrier Transport, Vol. 10 of Modular Series on Solid State Devices
, vol.10
-
-
Lundstrom, M.1
-
9
-
-
0026899752
-
-
D. B. M. Klaassen, Solid-State Electron. 35, 953 (1992); 35, 961 (1992).
-
(1992)
Solid-State Electron.
, vol.35
, pp. 961
-
-
-
12
-
-
0027888060
-
-
S. Noor Mohammad, A. V. Bemis, R. L. Carter, and R. B. Renbeck, Solid-State Electron. 36, 1677 (1993).
-
(1993)
Solid-State Electron.
, vol.36
, pp. 1677
-
-
Noor Mohammad, S.1
Bemis, A.V.2
Carter, R.L.3
Renbeck, R.B.4
-
14
-
-
0004022744
-
-
Silvaco International, Santa Clara
-
ATLAS User Manual (Silvaco International, Santa Clara, 1997).
-
(1997)
ATLAS User Manual
-
-
-
16
-
-
0032321049
-
-
B-C. Lye, P. A. Houston, H-K. Yow, and C. C. Button, IEEE Trans. Electron Devices 45, 2417 (1998).
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 2417
-
-
Lye, B.-C.1
Houston, P.A.2
Yow, H.-K.3
Button, C.C.4
-
17
-
-
0037856607
-
-
M. Wenzel, G. Irmer, J. Monecke, and W. Siegel, Semicond. Sci. Technol. 13, 505 (1998).
-
(1998)
Semicond. Sci. Technol.
, vol.13
, pp. 505
-
-
Wenzel, M.1
Irmer, G.2
Monecke, J.3
Siegel, W.4
-
19
-
-
0019013235
-
-
W. Walukiewicz, J. Lagowski, L. Jastrzebski, P. Rava, M. Lichtensteiger, C. H. Gatos, and H. C. Gatos, J. Appl. Phys. 51, 2659 (1980).
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 2659
-
-
Walukiewicz, W.1
Lagowski, J.2
Jastrzebski, L.3
Rava, P.4
Lichtensteiger, M.5
Gatos, C.H.6
Gatos, H.C.7
-
20
-
-
0345963035
-
-
D. A. Anderson, N. Apsley, P. Davies, and P. L. Giles, J. Appl. Phys. 58, 3059 (1985).
-
(1985)
J. Appl. Phys.
, vol.58
, pp. 3059
-
-
Anderson, D.A.1
Apsley, N.2
Davies, P.3
Giles, P.L.4
-
21
-
-
0004242004
-
-
EMIS Datareviews series No. 16, INSPEC, London, Chaps. 2, 3
-
Properties of Gallium Arsenide, 3rd ed. EMIS Datareviews series No. 16, edited by M. R. Borzel and G. E. Stillman (INSPEC, London, 1996), Chaps. 2, 3, p. 106.
-
(1996)
Properties of Gallium Arsenide, 3rd Ed.
, pp. 106
-
-
Borzel, M.R.1
Stillman, G.E.2
-
25
-
-
0000255824
-
-
M. K. Hudait, P. Modak, S. Hardikar, and S. B. Krupanidhi, J. Appl. Phys. 82, 4931 (1997).
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 4931
-
-
Hudait, M.K.1
Modak, P.2
Hardikar, S.3
Krupanidhi, S.B.4
-
26
-
-
0003426857
-
-
World Scientific, Singapore
-
M. Levinshtein, S. Rumyantsev, and M. Shur, Handbook Series on Semi-conductor Parameters, Vol. 1: Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs; InP, InSb (World Scientific, Singapore, 1996), pp. 84-86, 153-155, 175-177.
-
(1996)
Handbook Series on Semi-conductor Parameters, Vol. 1: Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs; InP, InSb
, vol.1
, pp. 84-86
-
-
Levinshtein, M.1
Rumyantsev, S.2
Shur, M.3
-
29
-
-
0025521098
-
-
S. Selberherr, W. Hansch, M. Seavey, and J. Slotboom, Solid State Electron 33, 1425 (1990).
-
(1990)
Solid State Electron
, vol.33
, pp. 1425
-
-
Selberherr, S.1
Hansch, W.2
Seavey, M.3
Slotboom, J.4
-
31
-
-
0347224299
-
-
EMIS Datareviews Series No. 7, edited by S. Adachi INSPEC, London
-
S. Adachi (editor), Properties of Aluminium Gallium Arsenide, EMIS Datareviews Series No. 7, edited by S. Adachi (INSPEC, London, 1993), pp. 167-170.
-
(1993)
Properties of Aluminium Gallium Arsenide
, pp. 167-170
-
-
Adachi, S.1
-
32
-
-
0019073581
-
-
S. Fujita, S. M. Bedair, M. A. Littlejohn, and J. R. Hauser, J. Appl. Phys. 51, 5438 (1980).
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 5438
-
-
Fujita, S.1
Bedair, S.M.2
Littlejohn, M.A.3
Hauser, J.R.4
-
33
-
-
0004142847
-
-
Academic, New York
-
H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LEDs (Academic, New York, 1977), pp. 332, 333, 348-353.
-
(1977)
Semiconductor Lasers and Heterojunction LEDs
, pp. 332
-
-
Kressel, H.1
Butler, J.K.2
-
34
-
-
0004108176
-
-
EMIS Datareviews Series No. 6, INSPEC, London, Chaps. 4, 5
-
Properties of Indium Phosphide, EMIS Datareviews Series No. 6, edited by S. Adachi (INSPEC, London, 1991), Chaps. 4, 5, p. 400.
-
(1991)
Properties of Indium Phosphide
, pp. 400
-
-
Adachi, S.1
-
37
-
-
0032673983
-
-
S. F. Yoon, H. Q. Zheng, P. H. Zhang, K. W. Mah, and G. I. Ng, Jpn. J. Appl. Phys., Part 1 38, 981 (1999).
-
(1999)
Jpn. J. Appl. Phys., Part 1
, vol.38
, pp. 981
-
-
Yoon, S.F.1
Zheng, H.Q.2
Zhang, P.H.3
Mah, K.W.4
Ng, G.I.5
-
39
-
-
0032621270
-
-
P. A. Postigo, M. L. Dotor, P. Huertas, F. Garcia, D. Golmayo, and F. Briones, J. Appl. Phys. 85, 6567 (1999).
-
(1999)
J. Appl. Phys.
, vol.85
, pp. 6567
-
-
Postigo, P.A.1
Dotor, M.L.2
Huertas, P.3
Garcia, F.4
Golmayo, D.5
Briones, F.6
-
42
-
-
0000784328
-
-
Y. Ohba, M. Ishikawa, H. Sugawara, M. Yamamoto, and T. Nakanishi, J. Cryst. Growth 77, 374 (1986).
-
(1986)
J. Cryst. Growth
, vol.77
, pp. 374
-
-
Ohba, Y.1
Ishikawa, M.2
Sugawara, H.3
Yamamoto, M.4
Nakanishi, T.5
-
43
-
-
85037447380
-
-
Epitaxial Products International, Cardiff, UK (private communication)
-
Epitaxial Products International, Cardiff, UK (private communication).
-
-
-
-
44
-
-
0000288887
-
-
J. H. Quigley, M. J. Hafich, H. Y. Lee, R. E. Stave, and G. Y. Robinson, J. Vac. Sci. Technol. B 7, 358 (1989).
-
(1989)
J. Vac. Sci. Technol. B
, vol.7
, pp. 358
-
-
Quigley, J.H.1
Hafich, M.J.2
Lee, H.Y.3
Stave, R.E.4
Robinson, G.Y.5
-
46
-
-
85037477508
-
-
III-V Semiconductor Centre, University of Sheffield, UK (private communication)
-
III-V Semiconductor Centre, University of Sheffield, UK (private communication).
-
-
-
-
48
-
-
0022580761
-
-
C. C. Hsu, J. S. Yuan, R. M. Cohen, and G. B. Stringfellow, J. Appl. Phys. 59, 395 (1986).
-
(1986)
J. Appl. Phys.
, vol.59
, pp. 395
-
-
Hsu, C.C.1
Yuan, J.S.2
Cohen, R.M.3
Stringfellow, G.B.4
-
53
-
-
0032576490
-
-
Y. Hsu, G. B Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, and T-Y. Seong, Appl. Phys. Lett. 73, 3905 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 3905
-
-
Hsu, Y.1
Stringfellow, G.B.2
Inglefield, C.E.3
DeLong, M.C.4
Taylor, P.C.5
Cho, J.H.6
Seong, T.-Y.7
-
54
-
-
0002801553
-
-
W. T. Masselink, M. Zachau, T. W. Hickmott, and K. Hendrickson, J. Vac. Sci. Technol. B 10, 966 (1992).
-
(1992)
J. Vac. Sci. Technol. B
, vol.10
, pp. 966
-
-
Masselink, W.T.1
Zachau, M.2
Hickmott, T.W.3
Hendrickson, K.4
-
55
-
-
0004617049
-
-
J. B. Lee, S. D. Kwon, I. Kim, Y. H. Cho, and B-D. Choe, J. Appl. Phys. 71, 5016 (1992).
-
(1992)
J. Appl. Phys.
, vol.71
, pp. 5016
-
-
Lee, J.B.1
Kwon, S.D.2
Kim, I.3
Cho, Y.H.4
Choe, B.-D.5
-
57
-
-
0012471434
-
-
D. Biswas, H. Lee, A. Salvador, M. V. Klein, and H. Morkoc, J. Vac. Sci. Technol. B 10, 962 (1992).
-
(1992)
J. Vac. Sci. Technol. B
, vol.10
, pp. 962
-
-
Biswas, D.1
Lee, H.2
Salvador, A.3
Klein, M.V.4
Morkoc, H.5
-
59
-
-
0000747863
-
-
H. Sai, H. Fujikura, and H. Hasegawa, Jpn. J. Appl. Phys., Part 1 38, 824 (1999).
-
(1999)
Jpn. J. Appl. Phys., Part 1
, vol.38
, pp. 824
-
-
Sai, H.1
Fujikura, H.2
Hasegawa, H.3
-
60
-
-
0007809631
-
-
S. Courmont, Ph. Maurel, C. Grattepain, and J. Ch. Garcia, Appl. Phys. Lett. 64, 1371 (1994).
-
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 1371
-
-
Courmont, S.1
Maurel, Ph.2
Grattepain, C.3
Garcia, J.Ch.4
-
62
-
-
0345963025
-
-
Ph.D. Dissertation, King's College London, to be submitted, April
-
M. Sotoodeh, Ph.D. Dissertation, King's College London, to be submitted, April 2000.
-
(2000)
-
-
Sotoodeh, M.1
-
63
-
-
0000254147
-
-
F. Fuchs, K. Khang, P. Koidl, and K. Schwarz, Phys. Rev. B 48, 7884 (1993).
-
(1993)
Phys. Rev. B
, vol.48
, pp. 7884
-
-
Fuchs, F.1
Khang, K.2
Koidl, P.3
Schwarz, K.4
-
66
-
-
0022660567
-
-
T. Fujii, T. Inata, K. Ishii, and S. Hiyamizu, Electron. Lett. 22, 191 (1986).
-
(1986)
Electron. Lett.
, vol.22
, pp. 191
-
-
Fujii, T.1
Inata, T.2
Ishii, K.3
Hiyamizu, S.4
-
67
-
-
0032629116
-
-
S. Goto, T. Ueda, T. Ohshima, and H. Kakinuma, Jpn. J. Appl. Phys., Part 1 38B, 1048 (1999).
-
(1999)
Jpn. J. Appl. Phys., Part 1
, vol.38 B
, pp. 1048
-
-
Goto, S.1
Ueda, T.2
Ohshima, T.3
Kakinuma, H.4
-
68
-
-
0019528281
-
-
P. K. Bhattacharya, J. W. Ku, S. J. T. Owen, G. H. Olsen, and S-H. Chiao, IEEE J. Quantum Electron. QE-17, 150 (1981).
-
(1981)
IEEE J. Quantum Electron.
, vol.QE-17
, pp. 150
-
-
Bhattacharya, P.K.1
Ku, J.W.2
Owen, S.J.T.3
Olsen, G.H.4
Chiao, S.-H.5
-
70
-
-
0003539448
-
-
Wiley, New York, Appendix
-
S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley, New York, 1992), Appendix.
-
(1992)
Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
-
-
Adachi, S.1
|