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Volumn 87, Issue 6, 2000, Pages 2890-2900

Empirical low-field mobility model for III-V compounds applicable in device simulation codes

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000534150     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372274     Document Type: Article
Times cited : (383)

References (70)
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    • (1997) ATLAS User Manual
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    • EMIS Datareviews Series No. 7, edited by S. Adachi INSPEC, London
    • S. Adachi (editor), Properties of Aluminium Gallium Arsenide, EMIS Datareviews Series No. 7, edited by S. Adachi (INSPEC, London, 1993), pp. 167-170.
    • (1993) Properties of Aluminium Gallium Arsenide , pp. 167-170
    • Adachi, S.1
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    • 0004108176 scopus 로고
    • EMIS Datareviews Series No. 6, INSPEC, London, Chaps. 4, 5
    • Properties of Indium Phosphide, EMIS Datareviews Series No. 6, edited by S. Adachi (INSPEC, London, 1991), Chaps. 4, 5, p. 400.
    • (1991) Properties of Indium Phosphide , pp. 400
    • Adachi, S.1
  • 43
    • 85037447380 scopus 로고    scopus 로고
    • Epitaxial Products International, Cardiff, UK (private communication)
    • Epitaxial Products International, Cardiff, UK (private communication).
  • 46
    • 85037477508 scopus 로고    scopus 로고
    • III-V Semiconductor Centre, University of Sheffield, UK (private communication)
    • III-V Semiconductor Centre, University of Sheffield, UK (private communication).
  • 62
    • 0345963025 scopus 로고    scopus 로고
    • Ph.D. Dissertation, King's College London, to be submitted, April
    • M. Sotoodeh, Ph.D. Dissertation, King's College London, to be submitted, April 2000.
    • (2000)
    • Sotoodeh, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.