Submilliamp long wavelength vertical cavity lasers

Electronics Letters

Volumn 32, Issue 18, 1996, Pages 1675-1677

  Margalit, N M ^a   Babic, D I ^a   Streubel, K ^a   Mirin, R P ^a   Naone, R L ^a   Bowers, J E ^a   Hu, E L ^a  

^a NONE

Author keywords

Vertical cavity surface emitting lasers

Indexed keywords

ELECTRIC CURRENTS; EPITAXIAL GROWTH; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; VAPOR PHASE EPITAXY;

LATERAL OXIDATION; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

LASER RESONATORS;

EID: 0030217345     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961099     Document Type: Article

References (6)

1. BABIC, D.I., STREUSEL, K., MIRIN, R.P., MARGALIT, N.M., BOWERS, J.E., HU, E.L., MARS, D.E., YANG, L., and CAREY, K.: 'Room-temperature continuous-wave operation of 1.54μm vertical-cavity lasers', IEEE Photonics Technol. Lett., 1995, 7, (11), pp. 1225-1227
2. LEAR, K.L., CHOQUETTE, K.D., SCHNEIDER, R.P. Jr., KILCOYNE, S.P., and GEIB, K.M.: 'Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency', Electron. Lett., 1995, 31, (3), pp. 208-209
3. YANG, G.M., MACDOUGAL, M.H., and DAPKUS, P.D.: 'Ultralow threshold VCSELs fabricated by selective oxidation from all epitaxial structure'. Tech Dig. CLEO'95, 1995, Postdeadline paper CPD4
4. MARGALIT, N.M., BABIC, D.I., STREUBEL, K., MIRIN, R.P., MARS, D.E., ZHANG, S., BOWERS, J.E., and HU, E.L.: 'Laterally oxidised CW long-wavelength vertical cavity lasers'. Tech. Dig. OFC'96, 1996, Postdeadline paper PD10
5. HEGBLOM, E.R., BABIC, D.I., THIBEAULT, B.J., and COLDREN, L.A.: 'Estimation of scattering losses in dielectrically apertured vertical cavity lasers', Appl. Phys. Lett., 1996, 68, (13), pp. 1757-1759
6. HADLEY, G.R.: 'Effective index model for vertical-cavity surface-emitting lasers', Opt. Lett., 1995, 20, (13), pp. 1483-1485