Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 2, 2001, Pages 188-191

  Kneissl, Michael ^a,b   Wong, William S ^b   Treat, David W ^b   Teepe, Mark ^b   Miyashita, Naoko ^b   Johnson, Noble M ^a,b  

^a IEEE   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

Copper; GaN; InGaN; Laser; Laser diode; Sapphire

Indexed keywords

CONTINUOUS WAVE THRESHOLD CURRENTS; COPPER SUBSTRATES; LASER LIFTOFF; MULTIPLE QUANTUM WELL LASER DIODES;

CONTINUOUS WAVE LASERS; COPPER; ELECTRIC CURRENTS; HEAT LOSSES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THRESHOLD VOLTAGE;

SEMICONDUCTOR LASERS;

EID: 0035263984     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.954129     Document Type: Article

References (12)

1. InGaN-based multi-quantum-well-structure laser diodes
2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
3. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
4. Article in the Nikkei industrial daily tuesday ed.
5. Fabrication of thin- Film InGaN light-emitting diode membranes by laser lift-off
6. A vertical injection blue light emitting diode in substrate separated InGaN heterostructures
7. Ubiquitous blue LEDs: The integration of GaN thin films with dissimilar substrate materials by wafer bonding and laser lift-off
8. 1-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off
9. Advances in laser diode development for high resolution and high speed printing
10. Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates
11. Damage-free separation of GaN thin films from sapphire substrates
12. Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrate