Electron transport characteristics of GaN for high temperature device modeling

Journal of Applied Physics

Volumn 83, Issue 9, 1998, Pages 4777-4781

  Albrecht, J D ^a   Wang, R P ^a   Ruden, P P ^a   Farahmand, M ^b   Brennan, K F ^b  

^a University of Minnesota   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000037953     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367269     Document Type: Article

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