Modeling of GaN optoelectronic devices and strain-induced piezoelectric effects

IEEE Journal of Quantum Electronics

Volumn 37, Issue 2, 2001, Pages 244-253

  Flory, Curt A ^a   Hasnain, Ghulam ^a  

^a AGILENT LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT POLARIZATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; THERMIONIC EMISSION;

PIEZOELECTRIC STRAIN FIELDS;

LIGHT EMITTING DIODES;

EID: 0035250486     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.903075     Document Type: Article

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