Violet InGaN/GaN/AlGaN-based laser diodes with an output power of 420 mW

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 6 A, 1998, Pages

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Nagahama, Shin ichi ^a   Iwasa, Naruhito ^a   Yamada, Takao ^a   Matsushita, Toshio ^a   Kiyoku, Hiroyuki ^a   Sugimoto, Yasunobu ^a   Kozaki, Tokuya ^a   Umemoto, Hitoshi ^a   Sano, Masahiko ^a   Chocho, Kazuyuki ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; LATERAL OVERGROWTH;

SEMICONDUCTOR LASERS;

EID: 0032092120     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l627     Document Type: Article

References (13)