Analysis of InGaN high-brightness light-emitting diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 5990-5993

  Lee, Song Jae ^a  

^a Chungnam National University   (South Korea)

Author keywords

Escape cone; External quantum efficiency; High brightness LED; Internal quantum efficiency; Light emitting diode (LED); Photon output coupling efficiency; Total internal reflection

Indexed keywords

LIGHT REFLECTION; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

INDIUM GALLIUM NITRIDE; PHOTON OUTPUT COUPLING EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 0032205616     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5990     Document Type: Article

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