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Volumn 33, Issue 8, 1997, Pages 1369-1383

Design and analysis of double-fused 1.55-μm vertical-cavity lasers

Author keywords

Fusion banding; Long wavelength vertical cavity lasers

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; LASER MODES; LIGHT ABSORPTION; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031213268     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.605560     Document Type: Article
Times cited : (93)

References (45)
  • 3
    • 0030212064 scopus 로고    scopus 로고
    • 1.55 μm vertical-cavity laser transmission over 200 km at 622 Mbit/s
    • S. Z. Zhang, N. M. Margalit, T. E. Reynolds, and J. E. Bowers, "1.55 μm vertical-cavity laser transmission over 200 km at 622 Mbit/s," Electron. Lett., vol. 32, no. 17, pp. 1597-1598, 1996.
    • (1996) Electron. Lett. , vol.32 , Issue.17 , pp. 1597-1598
    • Zhang, S.Z.1    Margalit, N.M.2    Reynolds, T.E.3    Bowers, J.E.4
  • 6
    • 0029745934 scopus 로고    scopus 로고
    • Continuous-wave operation up to 36°C of 1.3-μm GaInAsP/InP strained-layer multi-quantum-wells surface-emitting laser
    • Hamburg, Germany, Sept. 9-13, paper CMC1
    • S. Uchiyama, N. Yokouchi, and T. Ninomiya, "Continuous-wave operation up to 36°C of 1.3-μm GaInAsP/InP strained-layer multi-quantum-wells surface-emitting laser," in Proc. 1996 Conf. Lasers and Electro-Optics. Hamburg, Germany, Sept. 9-13, 1996, p. 11, paper CMC1.
    • (1996) Proc. 1996 Conf. Lasers and Electro-Optics , pp. 11
    • Uchiyama, S.1    Yokouchi, N.2    Ninomiya, T.3
  • 7
    • 0027599474 scopus 로고
    • Near room-temperature continuous wave lasing characteristics of GaInAsP/InP surface-emitting laser
    • T. Baba, Y. Yogo, K. Suzuki, F. Koyama, and K. Iga, "Near room-temperature continuous wave lasing characteristics of GaInAsP/InP surface-emitting laser," Electron. Lett., vol. 29, no. 10, pp. 913-914, 1993.
    • (1993) Electron. Lett. , vol.29 , Issue.10 , pp. 913-914
    • Baba, T.1    Yogo, Y.2    Suzuki, K.3    Koyama, F.4    Iga, K.5
  • 9
    • 0030212654 scopus 로고    scopus 로고
    • 1.55 μm vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/InP-GaAs/AlAs DBR's
    • Y. Ohiso, C. Amano, Y. Itoh, K. Tateno, and T. Tadokoro, "1.55 μm vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/InP-GaAs/AlAs DBR's," Electron. Lett., vol. 32, no. 16, pp. 1483-1484, 1996.
    • (1996) Electron. Lett. , vol.32 , Issue.16 , pp. 1483-1484
    • Ohiso, Y.1    Amano, C.2    Itoh, Y.3    Tateno, K.4    Tadokoro, T.5
  • 10
    • 21544474791 scopus 로고
    • Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration
    • Z. L. Liau and D. E. Mull, "Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration," Appl. Phys. Lett. vol. 56, no. 8, pp. 737-739, 1990.
    • (1990) Appl. Phys. Lett. , vol.56 , Issue.8 , pp. 737-739
    • Liau, Z.L.1    Mull, D.E.2
  • 13
    • 0023043012 scopus 로고
    • Wafer bonding for silicon- On-insulator technologies
    • J. B. Lasky, "Wafer bonding for silicon- on-insulator technologies," Appl. Phys. Lett., vol. 48, p. 78, 1986.
    • (1986) Appl. Phys. Lett. , vol.48 , pp. 78
    • Lasky, J.B.1
  • 14
    • 0026900505 scopus 로고
    • Semiconductor wafer bonding: A review of interfacial properties and applications
    • S. Bengtsson, "Semiconductor wafer bonding: A review of interfacial properties and applications," J. Electron. Mater., vol. 21, no. 8, pp. 841-862, 1992.
    • (1992) J. Electron. Mater. , vol.21 , Issue.8 , pp. 841-862
    • Bengtsson, S.1
  • 21
    • 0030572158 scopus 로고
    • Modeling and characterization of double-fused vertical-cavity lasers
    • J. Piprek, D. I. Babic, and J. E. Bowers, "Modeling and characterization of double-fused vertical-cavity lasers," Appl. Phys. Lett., vol. 68, no. 19, pp. 2630-2632, 1995.
    • (1995) Appl. Phys. Lett. , vol.68 , Issue.19 , pp. 2630-2632
    • Piprek, J.1    Babic, D.I.2    Bowers, J.E.3
  • 22
    • 0000434667 scopus 로고    scopus 로고
    • Comprehensive simulation and analysis of 1.55 μm double-fused vertical-cavity lasers
    • _. "Comprehensive simulation and analysis of 1.55 μm double-fused vertical-cavity lasers," J. Appl. Phys. vol. 81, no. 8, pp. 3382-3390, 1997.
    • (1997) J. Appl. Phys. , vol.81 , Issue.8 , pp. 3382-3390
  • 24
    • 0029292879 scopus 로고
    • Transverse mode and polarization characteristics of double-fused 1.52 μm vertical-cavity lasers
    • D. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, E. L. Hu, and J. E. Bowers, "Transverse mode and polarization characteristics of double-fused 1.52 μm vertical-cavity lasers," Electron. Lett. vol. 31, no. 8, pp. 653-654, 1995.
    • (1995) Electron. Lett. , vol.31 , Issue.8 , pp. 653-654
    • Babic, D.I.1    Streubel, K.2    Mirin, R.P.3    Margalit, N.M.4    Hu, E.L.5    Bowers, J.E.6
  • 26
    • 0026946665 scopus 로고
    • Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
    • A. Mircea, A. Ougazzaden, G. Primot, and C. Kazmierski, "Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE," J. Cryst. Growth. vol. 124, pp. 737-740, 1992.
    • (1992) J. Cryst. Growth. , vol.124 , pp. 737-740
    • Mircea, A.1    Ougazzaden, A.2    Primot, G.3    Kazmierski, C.4
  • 29
    • 0029777103 scopus 로고    scopus 로고
    • Uniparabolic mirror grading for vertical-cavity surface-emitting lasers
    • K. L. Lear and R. P. Schneider, Jr., "Uniparabolic mirror grading for vertical-cavity surface-emitting lasers," Appl. Phys. Lett., vol. 68, no. 5, pp. 605-607, 1996.
    • (1996) Appl. Phys. Lett. , vol.68 , Issue.5 , pp. 605-607
    • Lear, K.L.1    Schneider Jr., R.P.2
  • 30
    • 36149016941 scopus 로고
    • Infrared transmission and flourescence of doped Gallium Arsenide
    • D. E. Hill, "Infrared transmission and flourescence of doped Gallium Arsenide," Phys. Rev., vol. 133, no. 3A, pp. A866-A872, 1964.
    • (1964) Phys. Rev. , vol.133 , Issue.3 A
    • Hill, D.E.1
  • 31
  • 32
    • 0020766258 scopus 로고
    • The effect of intervalence bend absorption on the thermal behavior of InGaAsP lasers
    • June
    • C. H. Henry, R. A. Logan, F. R. Merrit, and J. P. Luongo, "The effect of intervalence bend absorption on the thermal behavior of InGaAsP lasers," IEEE J. Quantum Electron., vol. QE-19, pp. 947-952, June 1983.
    • (1983) IEEE J. Quantum Electron. , vol.QE-19 , pp. 947-952
    • Henry, C.H.1    Logan, R.A.2    Merrit, F.R.3    Luongo, J.P.4
  • 33
    • 0000571872 scopus 로고
    • Intervalence band transitions in gallium arsenide
    • R. Braunstein, "Intervalence band transitions in gallium arsenide," J. Phys. Chem Solids, vol. 8, pp. 280-282, 1959.
    • (1959) J. Phys. Chem Solids , vol.8 , pp. 280-282
    • Braunstein, R.1
  • 34
    • 0021204984 scopus 로고
    • Variation of intervalence band absorption with hole concentration in p-type InP
    • H. C. Casey, Jr., and P. L. Carter, "Variation of intervalence band absorption with hole concentration in p-type InP." Appl. Phys. Lett., vol. 44, no. 1, pp. 82-83, 1984.
    • (1984) Appl. Phys. Lett. , vol.44 , Issue.1 , pp. 82-83
    • Casey Jr., H.C.1    Carter, P.L.2
  • 35
    • 36149007117 scopus 로고
    • Infrared absorption and electron effective mass in n-type gallium arsenide
    • W. G. Spitzer and J. M. Whelan, "Infrared absorption and electron effective mass in n-type gallium arsenide," Phys. Rev., vol. 114, no. 1, pp. 59-63, 1959.
    • (1959) Phys. Rev. , vol.114 , Issue.1 , pp. 59-63
    • Spitzer, W.G.1    Whelan, J.M.2
  • 36
    • 0010886121 scopus 로고
    • Infrared absorption in n-type Germanium
    • H. Y. Fan, W. Spitzer, and R. J. Collins, "Infrared absorption in n-type Germanium," Phys. Rev., vol. 101, no. 2, pp. 566-572, 1956.
    • (1956) Phys. Rev. , vol.101 , Issue.2 , pp. 566-572
    • Fan, H.Y.1    Spitzer, W.2    Collins, R.J.3
  • 40
    • 21544484414 scopus 로고
    • Low-resistance ohmic conduction across compound semiconductor wafer-bonded interfaces
    • F. Kish, D. A. Vanderwater, M. J. Peanasky, M. J. Ludowise, S. G. Hummel, and S. J. Rosner, "Low-resistance ohmic conduction across compound semiconductor wafer-bonded interfaces," Appl. Phys. Lett., vol. 67, no. 14, pp. 2060-2062, 1995.
    • (1995) Appl. Phys. Lett. , vol.67 , Issue.14 , pp. 2060-2062
    • Kish, F.1    Vanderwater, D.A.2    Peanasky, M.J.3    Ludowise, M.J.4    Hummel, S.G.5    Rosner, S.J.6
  • 41
    • 0006429136 scopus 로고    scopus 로고
    • Investigation of direct bonding of III-V semiconductor wafers with lattice mismatch and orientation mismatch
    • Y. Okuno, "Investigation of direct bonding of III-V semiconductor wafers with lattice mismatch and orientation mismatch," Appl. Phys. Lett., vol. 68, no. 20, pp. 2855-2857, 1996.
    • (1996) Appl. Phys. Lett. , vol.68 , Issue.20 , pp. 2855-2857
    • Okuno, Y.1
  • 42
    • 0028509792 scopus 로고
    • Effects of heat treatment on bonding properties in InP-to-Si direct wafer bonding
    • A
    • H. Wada and T. Kamijoh, "Effects of heat treatment on bonding properties in InP-to-Si direct wafer bonding," Jpn. J. Appl. Phys., vol. 33, pt. 1, no. 9A, pp. 4878-4879, 1994.
    • (1994) Jpn. J. Appl. Phys., Vol. , vol.33 , Issue.9 PART 1 , pp. 4878-4879
    • Wada, H.1    Kamijoh, T.2
  • 43
    • 0030216017 scopus 로고    scopus 로고
    • Study of the dominant mechanism for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers
    • Aug.
    • S. Seki, H. Oohashi, H. Sugiura, T. Hirono, and K. Yokoyama, "Study of the dominant mechanism for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers," IEEE J. Quantum Electron., vol. 32, pp. 1478-1485, Aug. 1996.
    • (1996) IEEE J. Quantum Electron. , vol.32 , pp. 1478-1485
    • Seki, S.1    Oohashi, H.2    Sugiura, H.3    Hirono, T.4    Yokoyama, K.5
  • 44
    • 0028375245 scopus 로고
    • Modeling thermal effects on the light vs. current characteristics of gain-guided vertical-cavity surface-emitting lasers
    • Feb.
    • J. Piprek, J. H. Wenzel, and G. Stefka, "Modeling thermal effects on the light vs. current characteristics of gain-guided vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 6, pp. 139-142, Feb. 1994.
    • (1994) IEEE Photon. Technol. Lett. , vol.6 , pp. 139-142
    • Piprek, J.1    Wenzel, J.H.2    Stefka, G.3
  • 45
    • 0029638651 scopus 로고
    • Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)
    • Y. Okuno, M. Aoki, Tsuchiya, and K. Uomi, "Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)," Appl. Phys. Lett., vol. 67, no. 6, pp. 810-812, 1995.
    • (1995) Appl. Phys. Lett. , vol.67 , Issue.6 , pp. 810-812
    • Okuno, Y.1    Aoki, M.2    Tsuchiya3    Uomi, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.