Optical gain of strained wurtzite GaN quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 32, Issue 10, 1996, Pages 1791-1800

  Chuang, Shun Lien ^{a,b,c,d,e,f,g,h,i}  

^a IEEE

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^e University of Illinois at Urbana Champaign   (United States)

^f LUCENT TECHNOLOGIES   (United States)

^g TELCORDIA TECHNOLOGIES   (United States)

^h SONY Research Center

ⁱ AMERICAN PHYSICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CRYSTALS; ELECTRONIC STRUCTURE; ENERGY GAP; LATTICE CONSTANTS; MATHEMATICAL MODELS; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BAND GAP; CONDUCTION GAP; EFFECTIVE MASS HAMILTONIAN; HEAVY HOLE; LIGHT HOLE; OPTICAL GAIN; VALENCE BAND;

QUANTUM WELL LASERS;

EID: 0030270554     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.538786     Document Type: Article

References (33)

1. A. Ishibashi, "II-VI blue greend laser diodes," IEEE J. Select. Topics Quantum Electron., vol. 1, PP. 741-748, 1995.
2. S. Nakamura, M. M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys., vol. 35, pp. L74-L76, 1996.
3. R. Dingle, K. L. Shaklee, R. F. Leheny, and R. B. Zetterstrom, "Stimulated emission and laser action in gallium nitride," Appl. Phys. Lett., vol. 19, pp. 5-7, 1971.
4. I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka, and M. Koike, "Stimulated emission by current injection from an AIGaN/GaN/GaInN quantum well device," Jpn. J. Appl. Phys., vol. 34, pt. 2, pp. L1517-1519, 1995.
5. K.-H. Hellwege, Ed., Numerical Data and Functional Relationships in Science and Technology, Landolt-Börnstein, New Series, Groups III-V. Berlin: Springer, 1986, vol. 22a.
6. J. H. Edgar, Ed., Properties of Group III Nitrides. London: INSPEC, IEE, 1994.
7. K. Kobota, Y. Kobayashi, and K. Fujimoto, "Preparation and properties of III-V nitride thin films," J. Appl. Phys., vol. 66, pp. 2984-2988, 1989.
8. G. L. Bir and G. E. Pikus, Symmerty and Strain Induced Effects in Semiconductors. New York: Wiley, 1974.
9. G. E. Pikus, "A new method of calculating the energy spectrum of carriers in semiconductors. I. Neglecting spin-orbit interaction," Sov. phys. JEPT, vol. 14, pp. 898-907, 1962.
10. [1O] _, "A new method of calculating the energy spectrum of carriers in semiconductors. II. Account of spin-orbit interaction," Sov. Phys. JEPT, vol. 14, pp. 1075-1085, 1962.
11. M. Suzuki, T. Uenoyama, and A. Yanase, "First-principles calculations of effective-mass paramerers of AIN and GaN," Phys. Rev. B, vol. 52, pp. 8132-8139, 1995.
12. T. Uenoyama and M. Suzuki, " Valence subband structures of wurtzite GaN/AIGaN quantum wells," Appl. Phys. Lett., vol. 67, pp. 2527-2529, 1995.
13. S. Kamiyama, K. Ohnaka, M. Suzuki, and T. Uenoyama, "Optical gain calculation of wurtzite GaN/AIGaN quantum well laser," Jpn. J. Appl. Phys., vol. 34, p. L821, 1995.
14. S. L. Chuang and C. S. Chang, "K. p method for strained wurtzite semiconductors," Phys. Rev. B, Vol. 54, pp. 2491-2504, July, 1996
15. J. M. Luttinger and W. Kohn, "Motion of electrons and holes in perturbed periodic field," Phys. Rev., vol. 97, pp. 869-883, 1955.
16. C. Y. P. Chao and S. L. Chuang, "Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells," Phys. Rev. B, vol. 46, pp. 4110-1122, 1992.
17. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley, 1995.
18. C. S. Chang and S. L. Chuang, "Modeling of strained quantum well lasers with spin-orbit coupling," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 218-229, 1995.
19. S. L. Chuang and C. S. Chang, "Effective-mass Hamiltonian for strained wurtzite GaN and analytical solutions," Appl. Phys. Lett., vol. 68, pp. 1-3, 1996.
20. D. Ahn and S. L. Chuang, "Optical gain in a strained-layer quantum-well laser," IEEE J. Quantum Electron., vol. 24, pp. 2400-2406, 1988.
21. C. S. Chang and S. L. Chuang, "Amplified spontaneous emission spectroscopy in strained quantum-well lasers," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 1100-1107, 1995.
22. S. L. Chuang, J. O'Gorman, and A. F. J. Levi, "Amplified spontaneous emission and carrier pinning in laser diodes," IEEE J. Quantum Electron., vol. 29, pp. 1631-1639, 1993.
23. A. E. H. Love, A Treatise on the Mathematical Theory of Elasticity. New York: Dover, 1994, pp. 151-160.
24. F. Bassani and G. P. Parravicini, Electronic States and Optical Transitions in Solids. Oxford, U.K.: Pergamon, 1975, p. 24.
25. G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, H. Morkoc, W. R. L. Lambrecht, and B. Segall, "Valence-band discontinuity between GaN and AIN measured by X-ray photoemission spectroscopy," Appl. Phys. Lett., vol. 65, p. 610, 1994.
26. E. O. Kane, "Band structure of Indium Antimonide," J. Phys. Chem. Solids, vol. 1, pp. 249-261, 1957.
27. B. Gil, O. Briot, and R. L. Aulombard, "Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry," Phys Rev. B, vol. 52, pp. R17028-17031, 1995.
28. S. L. Chuang and C. S. Chang, "Band structure model of strained quantum-well wurzite semiconductors," unpublished.
29. W. Fang and S. L. Chuang, "Theoretical prediction of GaN lasing and temperature sensitivity," Appl. Phys. Lett., vol. 67, pp. 751-753, 1995.
30. W. W. Chow, A. F. Wright, and J. S. Nelson, "Thoeretical study of room temperature optical gain in GaN strained quantum wells," Appl. Phys. Lett., vol. 68, pp. 296-298, 1996.
31. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, "Excitonic emissions from hexagonal GaN epitaxial layers," J. Appl. Phys., Vol. 79, p. 2784, 1996.
32. J. Ding, H. Jeon, T. Ishihara, M. Hagerott, and A. V. Nurmikko, "Excitonic gain and laser emission in ZnSe-based quantum wells," Phys. Rev. Lett., vol. 69, pp. 1707-1710, 1992.
33. R. Dingle, D. D. Sell, S. E. Stokowski, and M. Ilegems, "Absocrption,. reflectance, and luminescence of GaN epitaxial layers," Phys. Rev. B, vol. 4, pp. 1211-1218, 1971.