Threshold conditions for an ultraviolet wavelength GaN quantum-well laser

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 3, 1998, Pages 514-519

  Chow, W W ^a,b   Hagerott Crawford, M ^b   Girndt, A ^c   Koch, S W ^c  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Laser theory; Many body effects; Nitride materials devices; Quantum well lsers; Semiconductor device modeling; Semiconductor lasers

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; LASER THEORY; LIGHT EMISSION; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPECTRUM ANALYSIS;

MANY BODY EFFECTS;

QUANTUM WELL LASERS;

EID: 3843074169     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.704111     Document Type: Article

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