Efficient modeling of the optical properties of MQW modulators on InGaAsP with absorption edge merging

IEEE Journal of Quantum Electronics

Volumn 34, Issue 9, 1998, Pages 1597-1603

  Ahland, Andreas ^a   Schulz, Dirk ^a,b   Voges, Edgar ^a,c,d  

^a TU DORTMUND UNIVERSITY   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^d UNIVERSITY OF HAGEN   (Germany)

Author keywords

Electroabsorption; Excitons; Optical modulator; Quantum wells; Semiconductor device modeling

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL METHODS; DIELECTRIC PROPERTIES OF SOLIDS; EXCITONS; FUNCTIONS; INTEGRAL EQUATIONS; LIGHT ABSORPTION; MATRIX ALGEBRA; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS;

ABSORPTION EDGE MERGING; MULTIPLE QUANTUM WELL (MQW) ELECTROABSORPTION MODULATORS;

LIGHT MODULATORS;

EID: 0032162869     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.709576     Document Type: Article

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