Thermally induced degradation of condensation-grown (100)Ge 0.75Si0.25/SiO2 interfaces revealed by electron spin resonance

Applied Physics Letters

Volumn 102, Issue 12, 2013, Pages

  Kepa, J ^a   Stesmans, A ^a   Afanasev, V V ^a  

^a KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING IN VACUUM; ATOMIC SCALE; INTERFACE DEFECTS; INTERFACE DEGRADATION; ISOCHRONAL ANNEALING; PASSIVATION TREATMENT; SILICON GERMANIUM ON INSULATORS; THERMALLY INDUCED DEGRADATIONS;

ANNEALING; CONDENSATION; DEFECTS;

GERMANIUM;

EID: 84875918297     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795309     Document Type: Article

References (40)

1. S. Takagi, T. Tezuka, T. Irisawa, S. Nakkaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane, and S. Sugahara, Solid State Electron. 51, 526 (2007); 10.1016/j.sse.2007.02.017
2. L. Clavelier and J. M. Hartmann, Proc. Silicon Nano Workshop (2005), p. 18.
3. See, e.g., P. D. Ye, G. D. Wilk, and M. M. Frank, in Advanced Gate Stacks for High-Mobility Semiconductors, edited by, A. Dimoulas, E. Gusev, P. C. McIntyre, and, M. Heyns, (Springer, Berlin, 2007), p. 341.
4. V. Terzieva, L. Souriau, F. Clemente, A. Benedetti, M. Caymax, and M. Meuris, Mater. Sci. Semicond. Process. 9, 449 (2006); 10.1016/j.mssp.2006.08.069
5. C. Le Royer, Microelectron. Eng. 88, 1541 (2011). 10.1016/j.mee.2011.03. 052
6. D. P. Brunco, B. De Jaeger, G. Eneman, J. Mitard, G. Hellings, A. Satta, V. Terzieva, L. Souriau, F. E. Leys, G. Pourtois, M. Houssa, G. Winderickx, E. Vrancken, S. Sioncke, K. Opsomer, G. Nicholas, M. Caymax, A. Stesmans, J. Van Steenbergen, P. W. Mertens, M. Meuris, and M. M. Heyns, J. Electrochem. Soc. 155, H552 (2008) 10.1149/1.2919115.
7. T. Tezuka, N. Sugiyama, and S. Takagi, Appl. Phys. Lett. 79, 1798 (2001) 10.1063/1.1404409.
8. B. Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, C. Licitra, Y. Morand, and L. Clavelier, Semicond. Sci. Technol. 22, 237 (2007). 10.1088/0268-1242/22/3/011
9. L. Souriau, V. Terzieva, W. Vandervorst, F. Clemente, B. Brijs, A. Moussa, M. Meuris, R. Loo, and M. Caymax, Thin Solid Films 517, 23 (2008). 10.1016/j.tsf.2008.08.029
10. H. G. Yang, D. Wang, H. Nakashima, K. Hirayama, S. Kojima, and S. Ikeura, Thin Solid Films 518, 2342 (2010). 10.1016/j.tsf.2009.09.179
11. D. M. Brown and P. V. Gray, J. Electrochem. Soc. 115, 760 (1968); 10.1149/1.2411420
12. T. W. Hickmott, J. Appl. Phys. 48, 723 (1977); 10.1063/1.323662
13. F. J. Montillo and P. Balk, J. Electrochem. Soc. 118, 1463 (1971); 10.1149/1.2408355
14. R. R. Razouk and B. E. Deal, J. Electrochem. Soc. 126, 1573 (1979). 10.1149/1.2129333
15. B. H. Vromen, Appl. Phys. Lett. 27, 152 (1975); 10.1063/1.88390
16. K. Hofmann, G. W. Rubloff, and D. R. Young, J. Appl. Phys. 61, 4584 (1987). 10.1063/1.338365
17. A. Stesmans and V. V. Afanasev, J.Vac. Sci. Technol. B 16, 3108 (1998); 10.1116/1.590449
18. A. Stesmans and V. V. Afanasev, Phys. Rev. B 54, R11129 (1996). 10.1103/PhysRevB.54.R11129
19. A. Stesmans, P. Somers, and V. V. Afanasev, Phys. Rev. B 79, 195301 (2009); 10.1103/PhysRevB.79.195301
20. A. Stesmans, P. Somers, V. V. Afanasev, and L. Souriau, J. Appl. Phys. 112, 074501 (2012).
21. V. V. Afanasev, M. Houssa, A. Stesmans, L. Souriau, R. Loo, and M. Meuris, Appl. Phys. Lett. 95, 222106 (2009). 10.1063/1.3266853
22. V. Terzieva, L. Souriau, F. Clemente, A. Benedetti, M. Caymax, and M. Meuris, Mater. Sci. Semicond. Proc. 9, 449 (2006) 10.1016/j.mssp.2006.08.069.
23. L. Souriau, Ph.D. dissertation, University of Leuven, 2012.
24. M.-A. Nicolet and W.-S. Liu, Microelectron. Eng. 28, 185 (1995). 10.1016/0167-9317(95)00040-F
25. K. Probhaharan and T. Ogino, Surf. Sci. 325, 263 (1995). 10.1016/0039-6028(94)00746-2
26. A. Stesmans, B. Nouwen, and V. V. Afanasev, Phys. Rev. B 58, 15801 (1998). 10.1103/PhysRevB.58.15801
27. R. E. Walkup and S. I. Raider, Appl. Phys. Lett. 53, 888 (1988). 10.1063/1.100105
28. K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, and A. Toriumi, Jpn. J. Appl. Phys. 47, 2349 (2008); 10.1143/JJAP.47.2349
29. S. K. Wang, K. Kita, C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi, J. Appl. Phys. 108, 054104 (2010). 10.1063/1.3475990
30. M. V. Minke and K. A. Jackson, J. Non-Cryst. Solids 351, 2310 (2005). 10.1016/j.jnoncrysol.2005.04.052
31. Y. Takakuwa, M. Nihei, and N. Miyamoto, Appl. Surf. Sci. 177-118, 141 (1997); 10.1016/S0169-4332(97)80068-2
32. M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, K. Shiraishi, and U. Goesele, Appl. Phys. Lett. 84, 876 (2004). 10.1063/1.1644623
33. A. Stesmans and G. Van Gorp, Phys. Rev. B 42, 3765 (1990); 10.1103/PhysRevB.42.3765
34. A. Stesmans and G. Van Gorp, Phys. Rev. B 45, 4344 (1992);
35. A. Stesmans, Phys. Rev. B 61, 8393 (2000). 10.1103/PhysRevB.61.8393
36. A. Stesmans, Phys. Rev. B 48, 2418 (1993) 10.1103/PhysRevB.48.2418.
37. K. Keunen, A. Stesmans, and V. V. Afanasev, Phys. Rev. B 84, 085329 (2011). 10.1103/PhysRevB.84.085329
38. K. L. Brower, Phys. Rev. B 33, 4471 (1986); 10.1103/PhysRevB.33.4471
39. A. Stesmans and J. Braet, in Insulating Films on Semiconductors, edited by, J. J. Simone, and, J. Buxo, (North-Holland, Amsterdam, 1986), p. 25.
40. A. Stesmans and V. V. Afanasev, Appl. Phys. Lett. 72, 2271 (1998) 10.1063/1.121335.