Opportunities and Challenges of Germanium Channel MOSFETs

Springer Series in Advanced Microelectronics

Volumn 27, Issue , 2007, Pages 315-332

  Shang, H ^a   Gusev, E P ^a   Frank, M M ^a   Chu, J O ^b   Bedell, S ^a   Gribelyuk, M ^c   Ott, J A ^a   Wang, X ^c   Guarini, K W ^a   Ieong, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c IBM RESEARCH   (United States)

Author keywords

Atomic Layer Deposition; Gate Dielectric; Gate Oxide; Interface Trap Density; Strain Relaxation

Indexed keywords

EID: 85103547324     PISSN: 14370387     EISSN: 21976643     Source Type: Book Series    
DOI: 10.1007/978-3-540-71491-0_14     Document Type: Chapter

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