Interfaces and performance: What future for nanoscale Ge and SiGe based CMOS?

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1541-1548

  Le Royer, C ^a  

^a CEA LETI   (France)

Author keywords

CMOS; Dualchannel; Ge; GeOI; High k; Interface; Mobility; MOSFET; SGOI; SiGe; SOI; Strain

Indexed keywords

CMOS; DUAL CHANNEL; GEOI; HIGH-K; MOS-FET; SGOI; SIGE; SOI;

GERMANIUM; MOSFET DEVICES; NANOTECHNOLOGY; SILICON ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79958050336     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.052     Document Type: Conference Paper

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