Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

Journal of Applied Physics

Volumn 115, Issue 15, 2014, Pages

  Coulon, P M ^a,b   Mexis, M ^a   Teisseire, M ^a   Jublot, M ^c   Vennegues P ^a   Leroux, M ^a   Zuniga Perez, J ^a  

^a CRHEA CNRS   (France)

^b UNIVERSITÉ CÔTE D'AZUR   (France)

^c AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

CROSS CORRELATIONS; DISLOCATION-FREE; METAL-ORGANIC VAPOR PHASE EPITAXY; METAL-ORGANIC VAPOUR PHASE EPITAXY; MICROPHOTOLUMINESCENCE; SAPPHIRE SUBSTRATES; SPATIALLY RESOLVED; STRUCTURAL AND OPTICAL PROPERTIES;

EPITAXIAL GROWTH;

EID: 84899840127     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4870950     Document Type: Article

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