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Applied Physics Letters

Volumn 96, Issue 24, 2010, Pages

Impact of N- and Ga-face polarity on the incorporation of deep levels in n -type GaN grown by molecular beam epitaxy

(6) Arehart, A R a Homan, T a Wong, M H b Poblenz, C b Speck, J S b Ringel, S A a

a The Ohio State University (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BANDGAP STATE; CARBON IMPURITIES; DEEP LEVEL; DEEP LEVEL OPTICAL SPECTROSCOPY; GAN CRYSTALS; GROWTH POLARITY; LOW CONCENTRATIONS; NITROGEN VACANCIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; TRAP DENSITY;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; GALLIUM NITRIDE; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; VACANCIES;

GALLIUM ALLOYS;

EID: 77953784126 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3453660 Document Type: Article

Times cited : (33)

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