Origin of defect-related photoluminescence bands in doped and nominally undoped gan

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 8, 1999, Pages 5561-5567

  Kaufmann, U ^a   Kunzer, M ^a   Obloh, H ^a   Maier, M ^a   Manz, C ^a   Ramakrishnan, A ^a   Santic, B ^a,b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b RUDER BO KOVI INSTITUTE   (Croatia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001735480     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.5561     Document Type: Article

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