Luminescence and reflectivity studies of undoped, n- And p-doped GaN on (0001) sapphire

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 97-104

  Leroux, M ^a   Beaumont, B ^a   Grandjean, N ^a   Lorenzini, P ^a   Haffouz, S ^a   Vennegues P ^a   Massies, J ^a   Gibart, P ^a  

^a CRHEA CNRS   (France)

Author keywords

n Doped GaN; p Doped GaN; Photoluminescence; Reflectivity; Undoped GaN

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); HALIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0002853307     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00143-8     Document Type: Article

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