Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 73, Issue 9, 1998, Pages 1188-1190

  Jayapalan, J ^a   Skromme, B J ^a   Vaudo, R P ^b   Phanse, V M ^b  

^a Arizona State University   (United States)

^b Epitronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000487651     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122123     Document Type: Article

References (14)

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