SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

(5) Chen, X J a Perillat Merceroz, G b Sam Giao, D a Durand, C a Eymery, J a

a UNIV GRENOBLE ALPES (France)

b CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

C-SAPPHIRE; CATALYST-FREE; CONVERGENT-BEAM ELECTRON DIFFRACTION; GAN NANOSTRUCTURES; HOMOEPITAXIAL GROWTH; HOMOEPITAXY; METAL-ORGANIC VAPOR PHASE EPITAXY; POLAR SUBSTRATES; SCHEMATIC REPRESENTATIONS; SURFACE POLARITIES;

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURES; OPTICAL PROPERTIES; SAPPHIRE; WIRE;

GALLIUM ALLOYS;

EID: 77958099815 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3497078 Document Type: Article

Times cited : (127)

References (21)

1
- 70349843701
- NPAHBY 1749-4885,. 10.1038/nphoton.2009.184
- R. X. Yan, D. Gargas, and P. D. Yang, Nat. Photonics NPAHBY 1749-4885 3, 569 (2009). 10.1038/nphoton.2009.184
- (2009) Nat. Photonics , vol.3 , pp. 569
- Yan, R.X.¹ Gargas, D.² Yang, P.D.³

2
- 0142075255
- Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections
- DOI 10.1021/nl034422t
- T. Kuykendall, P. Pauzauskie, S. W. Lee, Y. F. Zhang, J. Goldberger, and P. D. Yang, Nano Lett. NALEFD 1530-6984 3, 1063 (2003). 10.1021/nl034422t (Pubitemid 37289296)
- (2003) Nano Letters , vol.3 , Issue.8 , pp. 1063-1066
- Kuykendall, T.¹ Pauzauskie, P.² Lee, S.³ Zhang, Y.⁴ Goldberger, J.⁵ Yang, P.⁶

3
- 71549168357
- NNOTER 0957-4484,. 10.1088/0957-4484/21/1/015602
- R. Koester, J. S. Hwang, C. Durand, L. S. Dang, and J. Eymery, Nanotechnology NNOTER 0957-4484 21, 015602 (2010). 10.1088/0957-4484/21/1/015602
- (2010) Nanotechnology , vol.21 , pp. 015602
- Koester, R.¹ Hwang, J.S.² Durand, C.³ Dang, L.S.⁴ Eymery, J.⁵

4
- 77953511582
- APPLAB 0003-6951,. 10.1063/1.3443734
- H. Sekiguchi, K. Kishino, and A. Kikuchi, Appl. Phys. Lett. APPLAB 0003-6951 96, 231104 (2010). 10.1063/1.3443734
- (2010) Appl. Phys. Lett. , vol.96 , pp. 231104
- Sekiguchi, H.¹ Kishino, K.² Kikuchi, A.³

5
- 0000252877
- APPLAB 0003-6951,. 10.1063/1.126632
- K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa, Appl. Phys. Lett. APPLAB 0003-6951 76, 3212 (2000). 10.1063/1.126632
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3212
- Tachibana, K.¹ Someya, T.² Ishida, S.³ Arakawa, Y.⁴

6
- 10844242895
- Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
- DOI 10.1063/1.1815043
- P. R. Edwards, R. W. Martin, I. M. Watson, C. Liu, R. A. Taylor, J. H. Rice, J. H. Na, J. W. Robinson, and J. D. Smith, Appl. Phys. Lett. APPLAB 0003-6951 85, 4281 (2004). 10.1063/1.1815043 (Pubitemid 40001488)
- (2004) Applied Physics Letters , vol.85 , Issue.19 , pp. 4281-4283
- Edwards, P.R.¹ Martin, R.W.² Watson, I.M.³ Liu, C.⁴ Taylor, R.A.⁵ Rice, J.H.⁶ Na, J.H.⁷ Robinson, J.W.⁸ Smith, J.D.⁹

7
- 33748306266
- The controlled growth of GaN nanowires
- DOI 10.1021/nl060553t
- S. D. Hersee, X. Y. Sun, and X. Wang, Nano Lett. NALEFD 1530-6984 6, 1808 (2006). 10.1021/nl060553t (Pubitemid 44327551)
- (2006) Nano Letters , vol.6 , Issue.8 , pp. 1808-1811
- Hersee, S.D.¹ Sun, X.² Wang, X.³

8
- 0002584762
- CGDEFU 1528-7483,. 10.1021/cg015548b
- M. Aoki, H. Yamane, M. Shimada, T. Kajiwara, S. Sarayama, and F. J. DiSalvo, Cryst. Growth Des. CGDEFU 1528-7483 2, 55 (2002). 10.1021/cg015548b
- (2002) Cryst. Growth Des. , vol.2 , pp. 55
- Aoki, M.¹ Yamane, H.² Shimada, M.³ Kajiwara, T.⁴ Sarayama, S.⁵ Disalvo, F.J.⁶

9
- 41349100249
- Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
- DOI 10.1063/1.2899944
- D. Cherns, L. Meshi, I. Griffiths, S. Khongphetsak, S. V. Novikov, N. Farley, R. P. Campion, and C. T. Foxon, Appl. Phys. Lett. APPLAB 0003-6951 92, 121902 (2008). 10.1063/1.2899944 (Pubitemid 351451613)
- (2008) Applied Physics Letters , vol.92 , Issue.12 , pp. 121902
- Cherns, D.¹ Meshi, L.² Griffiths, I.³ Khongphetsak, S.⁴ Novikov, S.V.⁵ Farley, N.⁶ Campion, R.P.⁷ Foxon, C.T.⁸

10
- 61449119091
- NALEFD 1530-6984,. 10.1021/nl801344s
- S. H. Lee, T. Minegishi, J. S. Park, S. H. Park, J. -S. Ha, H. -J. Lee, H. -J. Lee, S. Ahn, J. Kim, H. Jeon, and T. Yao, Nano Lett. NALEFD 1530-6984 8, 2419 (2008). 10.1021/nl801344s
- (2008) Nano Lett. , vol.8 , pp. 2419
- Lee, S.H.¹ Minegishi, T.² Park, J.S.³ Park, S.H.⁴ Ha, J.-S.⁵ Lee, H.-J.⁶ Lee, H.-J.⁷ Ahn, S.⁸ Kim, J.⁹ Jeon, H.¹⁰ Yao, T.¹¹

11
- 77958108709
- Standard notations are used for polarity: a positive direction of the bond pointing from the Ga cation to the N anion defines the polar axis c labeled [0001] called also Ga-polar orientation.
- Standard notations are used for polarity: a positive direction of the bond pointing from the Ga cation to the N anion defines the polar axis c labeled [0001] called also Ga-polar orientation.

12
- 36248981988
- The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence
- DOI 10.1063/1.2815748
- F. Liu, R. Collazo, S. Mita, Z. Sitar, G. Duscher, and S. J. Pennycook, Appl. Phys. Lett. APPLAB 0003-6951 91, 203115 (2007). 10.1063/1.2815748 (Pubitemid 350128948)
- (2007) Applied Physics Letters , vol.91 , Issue.20 , pp. 203115
- Liu, F.¹ Collazo, R.² Mita, S.³ Sitar, Z.⁴ Duscher, G.⁵ Pennycook, S.J.⁶

13
- 77958093553
- note
- The diffraction patterns were carefully oriented in relation to the images: the sample was slightly lowered to be over-focused in diffraction mode to obtain a shadow image in the diffraction disks without any 180° rotation. For a given thickness, dynamical scattering induces different contrasts inside the [0002] and the [000 2-] disks.

14
- 77958094138
- JEMS electron microscopy software (java version 1.3422W2003), CIME-EPFL, Switzerland, - 2003.
- P. A. Stadelmann, JEMS electron microscopy software (java version 1.3422W2003), CIME-EPFL, Switzerland, 1999 - 2003.
- (1999)
- Stadelmann, P.A.¹

15
- 0001291812
- APPLAB 0003-6951,. 10.1063/1.124520
- V. Ramachandran, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, and D. W. Greve, Appl. Phys. Lett. APPLAB 0003-6951 75, 808 (1999). 10.1063/1.124520
- (1999) Appl. Phys. Lett. , vol.75 , pp. 808
- Ramachandran, V.¹ Feenstra, R.M.² Sarney, W.L.³ Salamanca-Riba, L.⁴ Northrup, J.E.⁵ Romano, L.T.⁶ Greve, D.W.⁷

16
- 77958113201
- In the case of growth on N-polar GaN and as mentioned for SG on sapphire, some Ga-polar crystals are observed due to nucleation on the SiNx layer [Fig.].
- In the case of growth on N-polar GaN and as mentioned for SG on sapphire, some Ga-polar crystals are observed due to nucleation on the SiNx layer [Fig.].

17
- 0001421454
- ZKGMA5 0372-9176.
- G. Wulff, Z. Kristallogr. Mineral. ZKGMA5 0372-9176 34, 449 (1901).
- (1901) Z. Kristallogr. Mineral. , vol.34 , pp. 449
- Wulff, G.¹

18
- 0026899707
- AMATEB 0956-7151,. 10.1016/0956-7151(92)90090-2
- J. E. Taylor, J. W. Cahn, and C. A. Handwerker, Acta Metall. Mater. AMATEB 0956-7151 40, 1443 (1992). 10.1016/0956-7151(92)90090-2
- (1992) Acta Metall. Mater. , vol.40 , pp. 1443
- Taylor, J.E.¹ Cahn, J.W.² Handwerker, C.A.³

19
- 28844441338
- Systematic prediction of kinetically limited crystal growth morphologies
- DOI 10.1103/PhysRevLett.95.155503, 155503
- D. Du, D. J. Srolovitz, M. E. Coltrin, and C. C. Mitchell, Phys. Rev. Lett. PRLTAO 0031-9007 95, 155503 (2005). 10.1103/PhysRevLett.95.155503 (Pubitemid 41777517)
- (2005) Physical Review Letters , vol.95 , Issue.15 , pp. 1-4
- Du, D.¹ Srolovitz, D.J.² Coltrin, M.E.³ Mitchell, C.C.⁴

20
- 56349125752
- JAPIAU 0021-8979,. 10.1063/1.3009969
- Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I. -H. Lee, J. Han, and M. E. Coltrin, J. Appl. Phys. JAPIAU 0021-8979 104, 093523 (2008). 10.1063/1.3009969
- (2008) J. Appl. Phys. , vol.104 , pp. 093523
- Sun, Q.¹ Yerino, C.D.² Ko, T.S.³ Cho, Y.S.⁴ Lee, I.-H.⁵ Han, J.⁶ Coltrin, M.E.⁷

21
- 70350728229
- JAPIAU 0021-8979,. 10.1063/1.3253575
- V. Jindal and F. Shahedipour-Sandivk, J. Appl. Phys. JAPIAU 0021-8979 106, 083115 (2009). 10.1063/1.3253575
- (2009) J. Appl. Phys. , vol.106 , pp. 083115
- Jindal, V.¹ Shahedipour-Sandivk, F.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.