SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 97, Issue 17, 2010, Pages

Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

(5) Wei, J D a Li, S F a Atamuratov, A a,b Wehmann, H H a Waag, A a

a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG (Germany)

b URGENCH STATE UNIVERSITY (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CONTACT LESS; FUNCTION OF TIME; KELVIN PROBE FORCE MICROSCOPY; LIGHT INTENSITY; NON DESTRUCTIVE; PHOTO-INDUCED; POLAR SURFACES; SURFACE PHOTOVOLTAGES; SURFACE POLARITIES;

CHEMISORPTION; GALLIUM ALLOYS; OXYGEN; PROBES;

GALLIUM NITRIDE;

EID: 78149462525 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3511541 Document Type: Article

Times cited : (32)

References (27)

1
- 0026819254
- JAPLD8 0021-4922,. 10.1143/JJAP.31.L139
- S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 31, L139 (1992). 10.1143/JJAP.31.L139
- (1992) Jpn. J. Appl. Phys., Part 2 , vol.31 , pp. 139
- Nakamura, S.¹ Mukai, T.² Senoh, M.³ Iwasa, N.⁴

2
- 0004167140
- (Springer, Berlin).
- H. Morko̧, Nitride Semiconductors and Devices (Springer, Berlin, 1999).
- (1999) Nitride Semiconductors and Devices
- Morko̧, H.¹

3
- 0005985130
- JAPIAU 0021-8979,. 10.1063/1.371145
- S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. JAPIAU 0021-8979 86, 1 (1999). 10.1063/1.371145
- (1999) J. Appl. Phys. , vol.86 , pp. 1
- Pearton, S.J.¹ Zolper, J.C.² Shul, R.J.³ Ren, F.⁴

4
- 0000189249
- APPLAB 0003-6951,. 10.1063/1.126267
- M. Sumiya, K. Yoshimura, K. Ohtsuka, and S. Fuke, Appl. Phys. Lett. APPLAB 0003-6951 76, 2098 (2000). 10.1063/1.126267
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2098
- Sumiya, M.¹ Yoshimura, K.² Ohtsuka, K.³ Fuke, S.⁴

5
- 77954362323
- NNOTER 0957-4484,. 10.1088/0957-4484/21/30/305201
- W. Bergbauer, M. Strassburg, Ch. Kölper, N. Linder, C. Roder, J. Lähnemann, A. Trampert, S. Fündling, S. F. Li, H. -H. Wehmann, and A. Waag, Nanotechnology NNOTER 0957-4484 21, 305201 (2010). 10.1088/0957-4484/21/ 30/305201
- (2010) Nanotechnology , vol.21 , pp. 305201
- Bergbauer, W.¹ Strassburg, M.² Kölper, Ch.³ Linder, N.⁴ Roder, C.⁵ Lähnemann, J.⁶ Trampert, A.⁷ Fündling, S.⁸ Li, S.F.⁹ Wehmann, H.-H.¹⁰ Waag, A.¹¹

6
- 36449004220
- Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
- DOI 10.1063/1.115687, PII S0003695196040119
- S. Keller, B. P. Keller, Y. F. Wu, B. Heying, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. APPLAB 0003-6951 68, 1525 (1996). 10.1063/1.115687 (Pubitemid 126688304)
- (1996) Applied Physics Letters , vol.68 , Issue.11 , pp. 1525-1527
- Keller, S.¹ Keller, B.P.² Wu, Y.-F.³ Heying, B.⁴ Kapolnek, D.⁵ Speck, J.S.⁶ Mishra, U.K.⁷ Denbaars, S.P.⁸

7
- 0000948557
- APPLAB 0003-6951,. 10.1063/1.1313275
- U. Karrer, O. Ambacher, and M. Stutumann, Appl. Phys. Lett. APPLAB 0003-6951 77, 2012 (2000). 10.1063/1.1313275
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2012
- Karrer, U.¹ Ambacher, O.² Stutumann, M.³

8
- 0001716964
- APPLAB 0003-6951,. 10.1063/1.120163
- M. Seelmann-Eggebert, J. L. Weyher, H. Obloh, H. Zimmermann, A. Rar, and S. Porowski, Appl. Phys. Lett. APPLAB 0003-6951 71, 2635 (1997). 10.1063/1.120163
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2635
- Seelmann-Eggebert, M.¹ Weyher, J.L.² Obloh, H.³ Zimmermann, H.⁴ Rar, A.⁵ Porowski, S.⁶

9
- 0001712691
- APPLAB 0003-6951,. 10.1063/1.118052
- F. A. Ponce, D. P. Bour, W. Y. Young, M. Saunders, and J. W. Steeds, Appl. Phys. Lett. APPLAB 0003-6951 69, 337 (1996). 10.1063/1.118052
- (1996) Appl. Phys. Lett. , vol.69 , pp. 337
- Ponce, F.A.¹ Bour, D.P.² Young, W.Y.³ Saunders, M.⁴ Steeds, J.W.⁵

10
- 79955996495
- APPLAB 0003-6951,. 10.1063/1.1504876
- X. Kong, G. Q. Hu, X. F. Duan, Y. Lu, and X. L. Liu, Appl. Phys. Lett. APPLAB 0003-6951 81, 1990 (2002). 10.1063/1.1504876
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1990
- Kong, X.¹ Hu, G.Q.² Duan, X.F.³ Lu, Y.⁴ Liu, X.L.⁵

11
- 0242721155
- JAPIAU 0021-8979,. 10.1063/1.1618355
- W. C. Yang, B. J. Rodriauez, M. Park, R. J. Nemanich, O. Ambacher, and V. Cimalla, J. Appl. Phys. JAPIAU 0021-8979 94, 5720 (2003). 10.1063/1.1618355
- (2003) J. Appl. Phys. , vol.94 , pp. 5720
- Yang, W.C.¹ Rodriauez, B.J.² Park, M.³ Nemanich, R.J.⁴ Ambacher, O.⁵ Cimalla, V.⁶

12
- 33749996438
- Work function analysis of GaN-based lateral polarity structures by Auger electron energy measurements
- DOI 10.1063/1.2353785
- M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch, and O. Ambacher, J. Appl. Phys. JAPIAU 0021-8979 100, 074909 (2006). 10.1063/1.2353785 (Pubitemid 44570753)
- (2006) Journal of Applied Physics , vol.100 , Issue.7 , pp. 074909
- Niebelschutz, M.¹ Ecke, G.² Cimalla, V.³ Tonisch, K.⁴ Ambacher, O.⁵

13
- 0035938327
- APPLAB 0003-6951,. 10.1063/1.1358359
- K. M. Jones, P. Visconti, F. Yun, A. A. Baski, and H. Morko̧, Appl. Phys. Lett. APPLAB 0003-6951 78, 2497 (2001). 10.1063/1.1358359
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2497
- Jones, K.M.¹ Visconti, P.² Yun, F.³ Baski, A.A.⁴ Morko̧, H.⁵

14
- 17944378843
- Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures
- DOI 10.1063/1.1869535, 112115
- B. J. Rodriguez, W. C. Yang, R. J. Nemanich, and A. Gruverman, Appl. Phys. Lett. APPLAB 0003-6951 86, 112115 (2005). 10.1063/1.1869535 (Pubitemid 40597021)
- (2005) Applied Physics Letters , vol.86 , Issue.11 , pp. 1-3
- Rodriguez, B.J.¹ Yang, W.-C.² Nemanich, R.J.³ Gruverman, A.⁴

15
- 33845433500
- Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate
- DOI 10.1063/1.2398924
- R. Katayama, Y. Kuge, K. Onabe, T. Matsushita, and T. Kondo, Appl. Phys. Lett. APPLAB 0003-6951 89, 231910 (2006). 10.1063/1.2398924 (Pubitemid 44907221)
- (2006) Applied Physics Letters , vol.89 , Issue.23 , pp. 231910
- Katayama, R.¹ Kuge, Y.² Onabe, K.³ Matsushita, T.⁴ Kondo, T.⁵

16
- 57049092779
- APPLAB 0003-6951,. 10.1063/1.3028639
- S. Barbet, R. Aubry, M. A. di Forte-Poisson, J. C. Jacquet, D. Deresmes, T. Melin, and D. Theron, Appl. Phys. Lett. APPLAB 0003-6951 93, 212107 (2008). 10.1063/1.3028639
- (2008) Appl. Phys. Lett. , vol.93 , pp. 212107
- Barbet, S.¹ Aubry, R.² Di Forte-Poisson, M.A.³ Jacquet, J.C.⁴ Deresmes, D.⁵ Melin, T.⁶ Theron, D.⁷

17
- 33745604763
- APPLAB 0003-6951,. 10.1063/1.105227
- M. Nonnenmacher, M. P. O'Boyle, and H. K. Wickramasinghe, Appl. Phys. Lett. APPLAB 0003-6951 58, 2921 (1991). 10.1063/1.105227
- (1991) Appl. Phys. Lett. , vol.58 , pp. 2921
- Nonnenmacher, M.¹ O'Boyle, M.P.² Wickramasinghe, H.K.³

18
- 4944234663
- JAPIAU 0021-8979,. 10.1063/1.1774245
- M. A. Reshchikov, S. Sabuktagin, D. K. Johnstone, and H. Morko̧, J. Appl. Phys. JAPIAU 0021-8979 96, 2556 (2004). 10.1063/1.1774245
- (2004) J. Appl. Phys. , vol.96 , pp. 2556
- Reshchikov, M.A.¹ Sabuktagin, S.² Johnstone, D.K.³ Morko̧, H.⁴

19
- 77953628702
- JAPIAU 0021-8979,. 10.1063/1.3430979
- M. A. Reshchikov, M. Foussekis, and A. A. Baski, J. Appl. Phys. JAPIAU 0021-8979 107, 113535 (2010). 10.1063/1.3430979
- (2010) J. Appl. Phys. , vol.107 , pp. 113535
- Reshchikov, M.A.¹ Foussekis, M.² Baski, A.A.³

20
- 0033355063
- Surface photovoltage phenomena: Theory, experiment, and applications
- DOI 10.1016/S0167-5729(99)00002-3
- L. Kronik and Y. Shapira, Surf. Sci. Rep. SSREDI 0167-5729 37, 1 (1999). 10.1016/S0167-5729(99)00002-3 (Pubitemid 30526524)
- (1999) Surface Science Reports , vol.37 , Issue.1 , pp. 1-206
- Kronik, L.¹ Shapira, Y.²

21
- 5244219952
- JECMA5 0361-5235,. 10.1007/BF02666640
- L. L. Smith, S. W. King, R. J. Nemanich, and R. F. Davis, J. Electron. Mater. JECMA5 0361-5235 25, 805 (1996). 10.1007/BF02666640
- (1996) J. Electron. Mater. , vol.25 , pp. 805
- Smith, L.L.¹ King, S.W.² Nemanich, R.J.³ Davis, R.F.⁴

22
- 79955998321
- Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
- DOI 10.1063/1.1481782
- H. W. Jang, J. H. Lee, and J. L. Lee, Appl. Phys. Lett. APPLAB 0003-6951 80, 3955 (2002). 10.1063/1.1481782 (Pubitemid 34638105)
- (2002) Applied Physics Letters , vol.80 , Issue.21 , pp. 3955
- Jang, H.W.¹ Lee, J.-H.² Lee, J.-L.³

23
- 18044373949
- PSSBBD 0370-1972,. 10.1002/1521-3951(200111)228:2<505::AID- PSSB505>3.0.CO;2-U
- M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, Phys. Status Solidi B PSSBBD 0370-1972 228, 505 (2001). 10.1002/1521-3951(200111)228: 2<505::AID-PSSB505>3.0.CO;2-U
- (2001) Phys. Status Solidi B , vol.228 , pp. 505
- Stutzmann, M.¹ Ambacher, O.² Eickhoff, M.³ Karrer, U.⁴ Lima Pimenta, A.⁵ Neuberger, R.⁶ Schalwig, J.⁷ Dimitrov, R.⁸ Schuck, P.J.⁹ Grober, R.D.¹⁰

24
- 65449179926
- APPLAB 0003-6951,. 10.1063/1.3122934
- M. Foussekis, A. A. Baski, and M. A. Reshchikov, Appl. Phys. Lett. APPLAB 0003-6951 94, 162116 (2009). 10.1063/1.3122934
- (2009) Appl. Phys. Lett. , vol.94 , pp. 162116
- Foussekis, M.¹ Baski, A.A.² Reshchikov, M.A.³

25
- 0003733538
- (Consultants Bureau, New York).
- T. Wolkenstein, Electronic Processes on Semiconductor Surface During Chemisorption (Consultants Bureau, New York, 1991).
- (1991) Electronic Processes on Semiconductor Surface during Chemisorption
- Wolkenstein, T.¹

26
- 0032615493
- APPLAB 0003-6951,. 10.1063/1.123658
- T. K. Zywietz, J. Neugebauer, and M. Scheffler, Appl. Phys. Lett. APPLAB 0003-6951 74, 1695 (1999). 10.1063/1.123658
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1695
- Zywietz, T.K.¹ Neugebauer, J.² Scheffler, M.³

27
- 3142649741
- JAPIAU 0021-8979,. 10.1063/1.1745124
- M. Losurdo, M. M. Giangregorio, P. Capezzuto, G. Bruno, G. Namkoong, W. A. Doolittle, and A. S. Brown, J. Appl. Phys. JAPIAU 0021-8979 95, 8408 (2004). 10.1063/1.1745124
- (2004) J. Appl. Phys. , vol.95 , pp. 8408
- Losurdo, M.¹ Giangregorio, M.M.² Capezzuto, P.³ Bruno, G.⁴ Namkoong, G.⁵ Doolittle, W.A.⁶ Brown, A.S.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.